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arXiv · 2506.09835

Current Crowding in a High-Efficiency Black Phosphorus Light-Emitting Diode Using a Reflective Back Contact

Julien Brodeur·Éloïse Rahier·Mathieu Chartray-Pronovost·Étienne Robert·Oussama Moutanabbir·Stéphane Kéna-Cohen
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Abstract

We demonstrate a high-performance mid-infrared (MIR) light-emitting diode (LED) based on a black phosphorus (b-P)/n-MoS$_2$ heterojunction. A gold back contact combined with a rhenium-doped n-type MoS$_2$ layer is used to enhance light extraction. The device shows a MIR peak external quantum efficiency (EQE) of (1.6 $\pm$ 0.2) % at room temperature and a record (7.0 $\pm$ 0.5) % EQE at 77 K, with a maximum radiant power density of (108 $\pm$ 8) W/cm2. Finite-element simulations highlight the importance of phonon-assisted band-to-band tunneling under reverse bias and the influence of carrier velocity saturation under forward bias. The simulations also reveal that the high ideality factors extracted from the current-voltage characteristic are due to current crowding at the heterojunction and a consequence of the device geometry. These findings establish a new high-performance b-P LED architecture and provide crucial insights into the physics of MIR sources based on 2D materials.

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Julien Brodeur, Éloïse Rahier, Mathieu Chartray-Pronovost, Étienne Robert, Oussama Moutanabbir, Stéphane Kéna-Cohen. 2025-06-11. Current Crowding in a High-Efficiency Black Phosphorus Light-Emitting Diode Using a Reflective Back Contact. https://arxiv.org/abs/2506.09835

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