arXiv subjects

Julien Brodeur

Publications and source records attributed to Julien Brodeur.

5 recordsLinked to original sources

arXiv2026

Mid-infrared distributed-feedback lasing from black phosphorus under nanosecond excitation

Mid-infrared (MIR) light sources compatible with silicon photonics are highly desirable for environmental sensing and free-space optical communications. Conventional GaSb-based quantum-well and interband-cascade lasers, however, rely on complex epitaxial heterostructures, complicating their integration with silicon photonic platforms. Here, we demonstrate a room-temperature MIR surface-emitting distributed-feedback (DFB) laser using black phosphorus (b-P) as the active gain medium. By deterministically integrating exfoliated b-P flakes onto lithographically patterned SiO$_2$ gratings, we obtain narrowband emission with a full width at half maximum below 3 nm under 1064 nm optical excitation. The lasing wavelength is tunable from 3.79 to 4.05$~\mu\text{m}$ through the b-P flake thickness, covering a technologically important region of the mid-infrared. Room-temperature thresholds as low as $(0.25 \pm 0.07)\ \text{mJ/cm}^2$ are achieved under nanosecond excitation. Upon cooling to 110 K, the threshold decreases tenfold to $(0.015 \pm 0.005)\ \text{mJ/cm}^2$. These results establish planar b-P DFB cavities as a promising platform for heterogeneously integrated MIR lasers based on van der Waals semiconductors.

physics.app-ph↗

arXiv2025

Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator

Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this perspective, germanium-tin (GeSn) alloy has been extensively investigated as a silicon-compatible semiconductor with bandgap tunability that covers this entire spectral range. Indeed, a variety of GeSn-based high-performance optoelectronic devices have been demonstrated, confirming the potential of this system for mid-infrared applications. However, the integration of these devices onto silicon photonic platforms remains underexplored. Herein, we demonstrate the fabrication and integration, through transfer-printing, of strain-relaxed GeSn membranes onto silicon-on-insulator waveguides to create integrated detectors operating up to 3.1 $\mu$m at room temperature. Two different designs of waveguide structures are evaluated to study the coupling efficiency between the passive structures and the active membrane detector. A responsivity reaching 0.36 A/W at an operation wavelength of 2.33 $\mu$m is measured under a bias of 1 V. Moreover, the fabrication resulted in multiple working devices exhibiting similar performance using a single transfer printing step, demonstrating the scalability of the proposed approach.

physics.app-ph↗

arXiv2025

Current Crowding in a High-Efficiency Black Phosphorus Light-Emitting Diode Using a Reflective Back Contact

We demonstrate a high-performance mid-infrared (MIR) light-emitting diode (LED) based on a black phosphorus (b-P)/n-MoS$_2$ heterojunction. A gold back contact combined with a rhenium-doped n-type MoS$_2$ layer is used to enhance light extraction. The device shows a MIR peak external quantum efficiency (EQE) of (1.6 $\pm$ 0.2) % at room temperature and a record (7.0 $\pm$ 0.5) % EQE at 77 K, with a maximum radiant power density of (108 $\pm$ 8) W/cm2. Finite-element simulations highlight the importance of phonon-assisted band-to-band tunneling under reverse bias and the influence of carrier velocity saturation under forward bias. The simulations also reveal that the high ideality factors extracted from the current-voltage characteristic are due to current crowding at the heterojunction and a consequence of the device geometry. These findings establish a new high-performance b-P LED architecture and provide crucial insights into the physics of MIR sources based on 2D materials.

physics.app-ph↗

arXiv2024

Transfer-printed multiple Ge$_{0.89}$Sn$_{0.11}$ membrane mid-infrared photodetectors

Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon wafers using Ge as an interlayer. However, the large lattice mismatch in this heteroepitaxy protocol leads to the build-up of compressive strain in the grown layers. This compressive strain limits the material quality and its thermal stability besides expanding the band gap, thereby increasing the Sn content needed to cover a broader range in the mid-infrared. Released Ge$_{1-x}$Sn$_x$ membranes provide an effective way to mitigate these harmful effects of the epitaxial strain and control the band gap energy while enabling the hybrid integration onto different substrates. With this perspective, herein strain-relaxed Ge$_{0.89}$Sn$_{0.11}$ membranes are fabricated and subsequently transfer-printed with metal contacts to create multiple photodetectors in a single transfer step. The resulting photodetectors exhibit an extended photodetection cutoff reaching a wavelength of $3.1 \,\mu$m, coupled with a significant reduction in the dark current of two orders of magnitude as compared to as-grown photoconductive devices. The latter yields a reduced cutoff of $2.8 \,\mu$m due to the inherent compressive strain. Furthermore, the impact of chemical treatment and annealing on the device performance was also investigated showing a further reduction in the dark current. The demonstrated transfer printing, along with the use of an adhesive layer, would allow the transfer of multiple GeSn membranes onto virtually any substrate. This approach paves the way for scalable fabrication of hybrid optoelectronic devices leveraging the tunable band gap of Ge$_{1-x}$Sn$_x$ in the mid-wave infrared range.

physics.app-ph↗

arXiv2018

Organic Photodiodes with an Extended Responsivity using Ultrastrong Light-Matter Coupling

In organic photodiodes (OPDs) light is absorbed by excitons, which dissociate to generate photocurrent. Here, we demonstrate a novel type of OPD in which light is absorbed by polaritons, hybrid light-matter states. We demonstrate polariton OPDs operating in the ultra-strong coupling regime at visible and infrared wavelengths. These devices can be engineered to show narrow responsivity with a very weak angle-dependence. More importantly, they can be tuned to operate in a spectral range outside that of the bare exciton absorption. Remarkably, we show that the responsivity of a polariton OPD can be pushed to near infrared wavelengths, where few organic absorbers are available, with external quantum efficiencies exceeding those of a control OPD.

physics.optics↗