arXiv · 2508.02662
Simulating high-temperature superconductivity in moir\'e WSe2
Abstract
The emergence of high transition temperature (Tc) superconductivity in strongly correlated materials remains a major unsolved problem in physics. High-Tc materials, such as cuprates, are generally complex and not easily tunable, making theoretical modelling difficult. Although the Hubbard model--a simple theoretical model of interacting electrons on a lattice--is believed to capture the essential physics of high-Tc materials, obtaining accurate solutions of the model, especially in the relevant regime of moderate correlation, is challenging. The recent demonstration of robust superconductivity in moir\'e WSe2, whose low-energy electronic bands can be described by the Hubbard model and are highly tunable, presents a new platform for tackling the high-Tc problem. Here, we tune moir\'e WSe2 bilayers to the moderate correlation regime through the twist angle and map the phase diagram around one hole per moir\'e unit cell (v = 1) by electrostatic gating and electrical transport and magneto-optical measurements. We observe a range of high-Tc phenomenology, including an antiferromagnetic insulator at v = 1, superconducting domes upon electron and hole doping, and unusual metallic states at elevated temperatures including strange metallicity. The highest Tc occurs adjacent to the Mott transition, reaching about 6% of the effective Fermi temperature. Our results establish a new material system based on transition metal dichalcogenide (TMD) moir\'e superlattices that can be used to study high-Tc superconductivity in a highly controllable manner and beyond.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Yiyu Xia, Zhongdong Han, Jiacheng Zhu, Yichi Zhang, Patrick Knüppel, Kenji Watanabe, Takashi Taniguchi, Kin Fai Mak, Jie Shan. 2025-08-04. Simulating high-temperature superconductivity in moir\'e WSe2. https://arxiv.org/abs/2508.02662
Cite the original work for its findings. Save a collection to share your selection of sources.