Tunable Light Emission from GaAsP and GaInP Islands Grown on Silicon (001) Nanotips Wafer

Navid Kafi; Adriana Rodrigues; Ines Haeusler; Haoran Ma; Carsten Netzel; Adnan Hammud; Oliver Skibitzki; Martin Schmidbauer; Fariba Hatami

arXiv · 2508.15455

Tunable Light Emission from GaAsP and GaInP Islands Grown on Silicon (001) Nanotips Wafer

Navid Kafi·Adriana Rodrigues·Ines Haeusler·Haoran Ma·Carsten Netzel·Adnan Hammud·Oliver Skibitzki·Martin Schmidbauer·Fariba Hatami

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Abstract

In this work, we present the monolithic integration of GaAsP and GaInP islands, selectively grown on a CMOS-compatible Si nanotip wafer using gas-source molecular beam epitaxy via a nanoheteroepitaxy approach. These alloys span a wide electronic bandgap range, from infrared to green; making them highly attractive for optoelectronic applications in silicon photonics. In addition, the nanoheteroepitaxy method enables the growth of various alloy combinations without the need for a lattice-matched substrate. We discuss the epitaxial challenges involved, particularly the balance between growth selectivity and alloy miscibility. Despite these challenges, our work demonstrates a promising and scalable route toward tunable light sources and detectors monolithically integrated on silicon, contributing to the development of compact and efficient photonic components for next-generation silicon-based technologies.

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Navid Kafi, Adriana Rodrigues, Ines Haeusler, Haoran Ma, Carsten Netzel, Adnan Hammud, Oliver Skibitzki, Martin Schmidbauer, Fariba Hatami. 2025-08-21. Tunable Light Emission from GaAsP and GaInP Islands Grown on Silicon (001) Nanotips Wafer. https://arxiv.org/abs/2508.15455

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