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arXiv · 2508.17997

Crystalline-to-Crystalline Phase Transition between Germanium Selenide Polymorphs with High Resistance Contrast

Joonho Kim·Kihyun Lee·Joong-Eon Jung·Han Joo Lee·Seongil Im·Kwanpyo Kim
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Abstract

Understanding phase transitions between crystalline phases of a material is crucial for both fundamental research and potential applications such as phase-change memory. In this study, we investigate the phase transition between GeSe crystalline polymorphs induced by either global annealing at moderate temperatures or localized laser-induced heating. The highly conductive gamma-GeSe transforms into semiconducting, single-crystalline alpha-GeSe while preserving a well-aligned crystal orientation. The distinct structural and electronic properties at the gamma-GeSe/alpha-GeSe interface were investigated by transmission electron microscopy analysis. We propose that the clustering of Ge vacancies in the gamma-GeSe phase at elevated temperatures is a key mechanism driving the transition, leading to the formation of alpha-GeSe through the segregation of a minor GeSe2 phase. Furthermore, we observe a high electrical resistance contrast of approximately 10^7 between gamma-GeSe and alpha-GeSe, underscoring the potential of GeSe as a model polymorphic system for electronic applications, including phase-change memory.

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Joonho Kim, Kihyun Lee, Joong-Eon Jung, Han Joo Lee, Seongil Im, Kwanpyo Kim. 2025-08-25. Crystalline-to-Crystalline Phase Transition between Germanium Selenide Polymorphs with High Resistance Contrast. https://doi.org/10.1021/acsnano.5c07687

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