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Kwanpyo Kim

Publications and source records attributed to Kwanpyo Kim.

At least 19 recordsLinked to original sources

Dimensional Control of Excitonic Interactions in Exfoliated 2D Molecular Crystals

Two-dimensional (2D) materials provide unique opportunities to tailor excited-state properties through reduced dimensionality, altered dielectric screening and layer-dependent structural reconstruction. While such effects have been widely explored in norganic systems, their realization in molecular crystals has been limited by the difficulty of controlling thickness at the atomic scale while preserving crystalline order. Here we show that tetracene and three other molecular crystals can be mechanically exfoliated into mono-, few- or multilayer flakes, while retaining crystalline order. This capability enables new studies of molecular crystals across a well defined thickness range within the same structural organization. Thickness-dependent spectra of these samples reveal how out-of-plane confinement modifies the excited-state energy landscape of tetracene: With decreasing thickness, the Davydov splitting diminishes, the Stokes shift increases, and signatures of more delocalized excitons emerge. Electron diffraction and exciton model-based analyses correlate these trends to changes in molecular packing, intermolecular coupling and dielectric screening. Our results also demonstrate that key features of molecular excitons can be systematically tuned by layer number, extending dimensional control from inorganic 2D materials to molecular crystals.

cond-mat.mtrl-sci

Dual-Mode Exciton Coupling in Epitaxially Registered Organic-Inorganic 2D Heterocrystals

Two-dimensional (2D) heterocrystals comprising molecules and semiconductors can serve as an ideal platform for studying interfacial excitons and for future optoelectronic applications, yet the energy and charge flow across these atomically sharp interfaces remain unclear. In this work, we investigated PTCDA-MoS2 as a prototypical 2D organic-inorganic heterostructure and revealed dual-mode exciton coupling between the constituent crystals. Monolayer-resolved PTCDA molecular crystals were grown on monolayer MoS2 via physical vapor assembly, and their crystallographic details, including the stacking angle, were determined by electron diffraction. Upon the formation of the heterostructures, PTCDA's photoluminescence was completely quenched because of organic-to-inorganic hole transfer, whereas that of MoS2 increased markedly with PTCDA thickness. Using differential reflectance and photoluminescence excitation spectroscopy, we found that the enhancement arises from two distinct mechanisms. Ground-state charge transfer injects holes into MoS2, which suppresses negative trion formation and enhances the radiative recombination of neutral excitons. In addition, resonant energy transfer, enabled by spectral overlap between PTCDA and MoS2, diverts excitation energy from PTCDA to MoS2. Our findings reconcile previously proposed mechanisms and establish a unified framework in which charge and energy transfer cooperate to govern exciton coupling at organic-inorganic interfaces.

cond-mat.mtrl-sci

Crystalline-to-Crystalline Phase Transition between Germanium Selenide Polymorphs with High Resistance Contrast

Understanding phase transitions between crystalline phases of a material is crucial for both fundamental research and potential applications such as phase-change memory. In this study, we investigate the phase transition between GeSe crystalline polymorphs induced by either global annealing at moderate temperatures or localized laser-induced heating. The highly conductive gamma-GeSe transforms into semiconducting, single-crystalline alpha-GeSe while preserving a well-aligned crystal orientation. The distinct structural and electronic properties at the gamma-GeSe/alpha-GeSe interface were investigated by transmission electron microscopy analysis. We propose that the clustering of Ge vacancies in the gamma-GeSe phase at elevated temperatures is a key mechanism driving the transition, leading to the formation of alpha-GeSe through the segregation of a minor GeSe2 phase. Furthermore, we observe a high electrical resistance contrast of approximately 10^7 between gamma-GeSe and alpha-GeSe, underscoring the potential of GeSe as a model polymorphic system for electronic applications, including phase-change memory.

cond-mat.mtrl-sci

Energetically Favored One-Dimensional Moir\'e Superstructure in the Pseudo-Square Lattice GdTe3

Moir\'e engineering in layered crystals has recently gained considerable attention due to the discovery of various structural and physical phenomena, including interfacial reconstruction, superconductivity, magnetism, and distinctive optoelectronic properties. Nevertheless, most explored moir\'e systems have been limited to hexagonal lattices, thereby constraining a comprehensive understanding and technological application of moir\'e phenomena in general layered crystals. Here, we investigate GdTe3, a pseudo-tetragonal layered crystal, as a platform to explore unconventional moir\'e phenomena. GdTe3 exhibits a slight in-plane distortion correlated with the direction of charge density wave formation. Through vertical stacking of layers with different distortions-induced via a controlled strain/release process-we realize energetically favorable one-dimensional (1D) moir\'e superstructures. Using transmission electron microscopy (TEM), including high-resolution scanning TEM imaging, dark-field TEM imaging, and sample tilting experiments, we systematically examine stacking variations across the 1D moir\'e structure. Additionally, electron energy loss spectroscopy reveals modulations in electronic properties associated with the 1D moir\'e structure. Our findings expand the scope of moir\'e systems beyond conventional hexagonal twistronics, enabling exploration of moir\'e phenomena in low-symmetry van der Waals crystals.

cond-mat.mtrl-sci

Type-II Red Phosphorus: Wavy Packing of Twisted Pentagonal Tubes

Elemental phosphorus exhibits fascinating structural varieties and versatile properties. The unique nature of phosphorus bonds can lead to the formation of extremely complex structures, and detailed structural information on some phosphorus polymorphs is yet to be investigated. In this study, we investigated an unidentified crystalline phase of phosphorus, type-II red phosphorus (RP), by combining state-of-the-art structural characterization techniques. Electron diffraction tomography, atomic-resolution scanning transmission electron microscopy (STEM), powder X-ray diffraction, and Raman spectroscopy were concurrently used to elucidate the hidden structural motifs and their packing in type-II RP. Electron diffraction tomography, performed using individual crystalline nanowires, was used to identify a triclinic unit cell with volume of 5330 {\AA}^3, the largest unit cell for elemental phosphorus crystals up to now, which contains approximately 250 phosphorus atoms. Atomic-resolution STEM imaging, which was performed along different crystal-zone axes, confirmed that the twisted wavy tubular motif is the basic building block of type-II RP. Our study discovered and presented a new variation of building blocks in phosphorus, and it provides insights to clarify the complexities observed in phosphorus as well as other relevant systems.

cond-mat.mtrl-sci

Electrical transport properties driven by unique bonding configuration in gamma-GeSe

Group-IV monochalcogenides have recently shown great potential for their thermoelectric, ferroelectric, and other intriguing properties. The electrical properties of group-IV monochalcogenides exhibit a strong dependence on the chalcogen type. For example, GeTe exhibits high doping concentration, whereas S/Se-based chalcogenides are semiconductors with sizable bandgaps. Here, we investigate the electrical and thermoelectric properties of gamma-GeSe, a recently identified polymorph of GeSe. gamma-GeSe exhibits high electrical conductivity (~106 S/m) and a relatively low Seebeck coefficient (9.4 uV/K at room temperature) owing to its high p-doping level (5x1021 cm-3), which is in stark contrast to other known GeSe polymorphs. Elemental analysis and first-principles calculations confirm that the abundant formation of Ge vacancies leads to the high p-doping concentration. The magnetoresistance measurements also reveal weak-antilocalization because of spin-orbit coupling in the crystal. Our results demonstrate that gamma-GeSe is a unique polymorph in which the modified local bonding configuration leads to substantially different physical properties.

cond-mat.mtrl-sci

In situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2

Understanding the phase transition mechanisms in two-dimensional (2D) materials is a key to precisely tailor their properties at the nanoscale. Molybdenum ditelluride (MoTe2) exhibits multiple phases at room temperature, making it a promising candidate for phase-change applications. Here, we fabricate lateral 2H-Td interfaces with laser irradiation and probe their phase transitions from micro- to atomic scales with in situ heating in the transmission electron microscope (TEM). By encapsulating the MoTe2 with graphene protection layers, we create an in situ reaction cell compatible with atomic resolution imaging. We find that the Td-to-2H phase transition initiates at phase boundaries at low temperatures (200-225 degree C) and propagates anisotropically along the b-axis in a layer-by-layer fashion. We also demonstrate a fully reversible 2H-Td-2H phase transition cycle, which generates a coherent 2H lattice containing inversion domain boundaries. Our results provide insights on fabricating 2D hetero-phase devices with atomically sharp and coherent interfaces.

cond-mat.mtrl-sci

In-Plane and Out-of-Plane Excitonic Coupling in 2D Molecular Crystals

Understanding the nature of molecular excitons in low-dimensional molecular solids is of paramount importance in fundamental photophysics and various applications such as energy harvesting, switching electronics and display devices. Despite this, the spatial evolution of molecular excitons and their transition dipoles have not been captured in the precision of molecular length scales. Here we show in-plane and out-of-plane excitonic evolution in quasilayered two-dimensional (2D) perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) crystals assembly-grown on hexagonal boron nitride (BN) crystals. Complete lattice constants with orientations of two herringbone-configured basis molecules are determined with polarization-resolved spectroscopy and electron diffraction methods. In the truly 2D limit of single layers, two Frenkel emissions Davydov-split by Kasha-type intralayer coupling exhibit energy inversion with decreasing temperature, which enhances excitonic coherence. As the thickness increases, the transition dipole moments of newly emerging charge transfer excitons are reoriented because of mixing with the Frenkel states. The current spatial anatomy of 2D molecular excitons will inspire a deeper understanding and groundbreaking applications of low-dimensional molecular systems.

cond-mat.mtrl-sci

Atomically Sharp, Closed Bilayer Phosphorene Edges by Self-Passivation

Two-dimensional (2D) crystals' edge structures not only influence their overall properties but also dictate their formation due to edge-mediated synthesis and etching processes. Edges must be carefully examined because they often display complex, unexpected features at the atomic scale, such as reconstruction, functionalization, and uncontrolled contamination. Here, we examine atomic-scale edge structures and uncover reconstruction behavior in bilayer phosphorene. We use in situ transmission electron microscopy (TEM) of phosphorene/graphene specimens at elevated temperatures to minimize surface contamination and reduce e-beam damage, allowing us to observe intrinsic edge configurations. Bilayer zigzag (ZZ) edge was found the most stable edge configuration under e-beam irradiation. Through first-principles calculations and TEM image analysis under various tilting and defocus conditions, we find that bilayer ZZ edges undergo edge reconstruction and so acquire closed, self-passivated edge configurations. The extremely low formation energy of the closed bilayer ZZ edge and its high stability against e-beam irradiation are confirmed by first-principles calculations. Moreover, we fabricate bilayer phosphorene nanoribbons with atomically-sharp closed ZZ edges. The identified bilayer ZZ edges will aid in the fundamental understanding of the synthesis, degradation, reconstruction, and applications of phosphorene and related structures.

cond-mat.mes-hall

STEM image analysis based on deep learning: identification of vacancy defects and polymorphs of ${MoS_2}$

Scanning transmission electron microscopy (STEM) is an indispensable tool for atomic-resolution structural analysis for a wide range of materials. The conventional analysis of STEM images is an extensive hands-on process, which limits efficient handling of high-throughput data. Here we apply a fully convolutional network (FCN) for identification of important structural features of two-dimensional crystals. ResUNet, a type of FCN, is utilized in identifying sulfur vacancies and polymorph types of ${MoS_2}$ from atomic resolution STEM images. Efficient models are achieved based on training with simulated images in the presence of different levels of noise, aberrations, and carbon contamination. The accuracy of the FCN models toward extensive experimental STEM images is comparable to that of careful hands-on analysis. Our work provides a guideline on best practices to train a deep learning model for STEM image analysis and demonstrates FCN's application for efficient processing of a large volume of STEM data.

cond-mat.mes-hall

γ-GeSe:a new hexagonal polymorph from group IV-VI monochalcogenides

The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first hexagonal polymorph from the family of group IV-VI monochalcogenides, which is conventionally orthorhombic. Recently predicted four-atomic-thick hexagonal GeSe, so-called γ-GeSe, is synthesized and clearly identified by complementary structural characterizations, including elemental analysis, electron diffraction, high-resolution transmission electron microscopy imaging, and polarized Raman spectroscopy. The electrical and optical measurements indicate that synthesized γ-GeSe exhibits high electrical conductivity of 3x10^5 S/m, which is comparable to those of other two-dimensional layered semimetallic crystals. Moreover, γ-GeSe can be directly grown on h-BN substrates, demonstrating a bottom-up approach for constructing vertical van der Waals heterostructures incorporating γ-GeSe. The newly identified crystal symmetry of γ-GeSe warrants further studies on various physical properties of γ-GeSe.

cond-mat.mes-hall

Single-Crystalline Metallic Films Induced by van der Waals Epitaxy on Black Phosphorus

The properties of metal-semiconductor junctions are often unpredictable because of non-ideal interfacial structures, such as interfacial defects or chemical reactions introduced at junctions. Black phosphorus (BP), an elemental two-dimensional (2D) semiconducting crystal, possesses the puckered atomic structure with high chemical reactivity, and the establishment of a realistic atomic-scale picture of BP's interface toward metallic contact has remained elusive. Here we examine the interfacial structures and properties of physically-deposited metals of various kinds on BP. We find that Au, Ag, and Bi form single-crystalline films with (110) orientation through guided van der Waals epitaxy. Transmission electron microscopy and X-ray photoelectron spectroscopy confirm that atomically sharp van der Waals metal-BP interfaces forms with exceptional rotational alignment. Under a weak metal-BP interaction regime, the BP's puckered structure play an essential role in the adatom assembly process and can lead to the formation of a single crystal, which is supported by our theoretical analysis and calculations. The experimental survey also demonstrates that the BP-metal junctions can exhibit various types of interfacial structures depending on metals, such as the formation of polycrystalline microstructure or metal phosphides. This study provides a guideline for obtaining a realistic view on metal-2D semiconductor interfacial structures, especially for atomically puckered 2D crystals.

cond-mat.mtrl-sci

Unidirectional Alignment of AgCN Microwires on Distorted Transition Metal Dichalcogenide Crystals

Van der Waals epitaxy on the surface of two-dimensional (2D) layered crystals has gained significant research interest for the assembly of well-ordered nanostructures and fabrication of vertical heterostructures based on 2D crystals. Although van der Waals epitaxial assembly on the hexagonal phase of transition metal dichalcogenides (TMDCs) has been relatively well characterized, a comparable study on the distorted octahedral phase (1T' or Td) of TMDCs is largely lacking. Here we investigate the assembly behavior of one-dimensional (1D) AgCN microwires on various distorted TMDC crystals, namely 1T'-MoTe2, Td-WTe2, and 1T'-ReS2. The unidirectional alignment of AgCN chains is observed on these crystals, reflecting the symmetry of underlying distorted TMDCs. Polarized Raman spectroscopy and transmission electron microscopy directly confirm that AgCN chains display the remarkable alignment behavior along the distorted chain directions of underlying TMDCs. The observed unidirectional assembly behavior can be attributed to the favorable adsorption configurations of 1D chains along the substrate distortion, which is supported by our theoretical calculations and observation of similar assembly behavior from different cyanide chains. The aligned AgCN microwires can be harnessed as facile markers to identify polymorphs and crystal orientations of TMDCs.

cond-mat.mtrl-sci

Optical phonons of SnSe(1-x)Sx layered semiconductor alloys

The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic orientation of the samples. Some of the Raman modes show significant variation in their polarization behavior depending on the excitation wavelengths. It is established that the maximum intensity direction of the Ag2 mode of SnSe1-xSx (0<=x<=1) does not depend on the excitation wavelength and corresponds to the armchair direction. It is additionally found that the lower-frequency Raman modes of Ag1, Ag2 and B3g1 in the alloys show the typical one-mode behavior of optical phonons, whereas the higher-frequency modes of B3g2, Ag3 and Ag4 show two-mode behavior.

cond-mat.mtrl-sci

Intense Dark Exciton Emission from Strongly Quantum Confined CsPbBr$_3$ Nanocrystals

Dark ground state exciton in semiconductor nanocrystals has been a subject of much interest due to its long lifetime attractive for applications requiring long-lived electronic or spin states. Significant effort has been made recently to explore and access the dark exciton level in metal halide perovskite nanocrystals, which are emerging as a superior source of photons and charges compared to other existing semiconductor nanocrystals. However, the direct observation of long-lived photoluminescence from dark exciton has remained elusive in metal halide perovskite nanocrystals. Here, we report the observation of the intense emission from dark ground state exciton with 1-10 us lifetime in strongly quantum confined CsPbBr3 nanocrystals, which contrasts the behavior of weakly confined system explored so far. The study in CsPbBr3 nanocrystals with varying degree of confinement has revealed the crucial role of quantum confinement in enhancing the bright-dark exciton level splitting which is important for accessing the dark exciton. Our work demonstrates the future potential of strongly quantum-confined perovskite nanocrystals as a new platform to utilize dark excitons.

physics.app-ph

Fabrication and Imaging of Monolayer Phosphorene with Preferred Edge Configurations via Graphene-Assisted Layer-by-Layer Thinning

Phosphorene, a monolayer of black phosphorus (BP), is an elemental two-dimensional material with interesting physical properties, such as high charge carrier mobility and exotic anisotropic in-plane properties. To fundamentally understand these various physical properties, it is critically important to conduct an atomic-scale structural investigation of phosphorene, particularly regarding various defects and preferred edge configurations. However, it has been challenging to investigate mono- and few-layer phosphorene because of technical difficulties arising in the preparation of a high-quality sample and damages induced during the characterization process. Here, we successfully fabricate high-quality monolayer phosphorene using a controlled thinning process with transmission electron microscopy, and subsequently perform atomic-resolution imaging. Graphene protection suppresses the e-beam-induced damage to multi-layer BP and one-side graphene protection facilitates the layer-by-layer thinning of the samples, rendering high-quality monolayer and bilayer regions. We also observe the formation of atomic-scale crystalline edges predominantly aligned along the zigzag and (101) terminations, which is originated from edge kinetics under e-beam-induced sputtering process. Our study demonstrates a new method to image and precisely manipulate the thickness and edge configurations of air-sensitive two-dimensional materials.

cond-mat.mes-hall

Atomic-scale imaging of few-layer black phosphorus and its reconstructed edge

Black phosphorus (BP) has recently emerged as an alternative 2D semiconductor owing to its fascinating electronic properties such as tunable bandgap and high charge carrier mobility. The structural investigation of few-layer BP, such as identification of layer thickness and atomic-scale edge structure, is of great importance to fully understand its electronic and optical properties. Here we report atomic-scale analysis of few-layered BP performed by aberration corrected transmission electron microscopy (TEM). We establish the layer-number-dependent atomic resolution imaging of few-layer BP via TEM imaging and image simulations. The structural modification induced by the electron beam leads to revelation of crystalline edge and formation of BP nanoribbons. Atomic resolution imaging of BP clearly shows the reconstructed zigzag (ZZ) edge structures, which is also corroborated by van der Waals first principles calculations on the edge stability. Our study on the precise identification of BP thickness and atomic-resolution imaging of edge structures will lay the groundwork for investigation of few-layer BP, especially BP in nanostructured forms.

cond-mat.mes-hall

Selective metal deposition at graphene line defects by atomic layer deposition

One-dimensional defects in graphene have strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the material and systematically tune the properties of graphene. Here we demonstrate the selective deposition of metal at chemical vapour deposited graphene's line defects, notably grain boundaries, by atomic layer deposition. Atomic layer deposition allows us to deposit Pt predominantly on graphene's grain boundaries, folds, and cracks due to the enhanced chemical reactivity of these line defects, which is directly confirmed by transmission electron microscopy imaging. The selective functionalization of graphene defect sites, together with the nanowire morphology of deposited Pt, yields a superior platform for sensing applications. Using Pt-graphene hybrid structures, we demonstrate high-performance hydrogen gas sensors at room temperatures and show its advantages over other evaporative Pt deposition methods, in which Pt decorates graphene surface non-selectively.

cond-mat.mtrl-sci