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arXiv · 2509.20828

Defect-Charge-Driven 90{\deg} Switching in HfO2

Muting Xie·Hongyu Yu·Zhihao Dai·Yingfen Wei·Changsong Xu·Hongjun Xiang
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Abstract

Hafnium dioxide (HfO2) is a CMOS-compatible ferroelectric showing both 180{\deg} and 90{\deg} switching, yet the microscopic nature of the 90{\deg} pathway remains unresolved. We show that the 90{\deg} rotation pathway, negligible in pristine HfO2, becomes dominant under E// [111] when induced by charged oxygen vacancies. This pathway is more fatigue-resistant than the 180{\deg} reversal pathway, while delivering the same polarization change along [111] (2Pr=60 {\mu}C/cm^2 ). This charge-driven switching arises from two factors: the crystal geometry of HfO2 and the intrinsic nature of rotational pathways, the latter suggesting a possible general tendency for defect charge to bias rotation over reversal in ferroelectrics. Together these findings reveal a pathway-level origin of fatigue resistance and establish defect charge as a general control parameter for polarization dynamics.

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Muting Xie, Hongyu Yu, Zhihao Dai, Yingfen Wei, Changsong Xu, Hongjun Xiang. 2025-09-25. Defect-Charge-Driven 90{\deg} Switching in HfO2. https://arxiv.org/abs/2509.20828

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