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arXiv · 2509.22185

Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics

Manuel Meyer·Jonas Baumbach·Sergey Krishtopenko·Adriana Wolf·Monika Emmerling·Sebastian Schmid·Martin Kamp·Benoit Jouault·Jean-Baptiste Rodriguez·Eric Tournie·Tobias Müller·Ronny Thomale·Gerald Bastard·Frederic Teppe·Fabian Hartmann·Sven Höfling
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Abstract

The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability, low-temperature operation, and the lack of robust electronic transport have hindered practical implementations. Here, we demonstrate the QSHE in an InAs/GaInSb/InAs trilayer quantum well structure operating at elevated temperatures. This platform meets key criteria for device integration, including scalability, reproducibility, and tunability via electric field. When the Fermi level is positioned within the energy gap, we observe quantized resistance values independent of device length and in both local and nonlocal measurement configurations, confirming the QSHE. Helical edge transport remains stable up to T = 60 K, with further potential for higher-temperature operation. Our findings establish the InAs/GaInSb system as a promising candidate for integration into next-generation devices harnessing topological functionalities, advancing the development of topological electronics.

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Manuel Meyer, Jonas Baumbach, Sergey Krishtopenko, Adriana Wolf, Monika Emmerling, Sebastian Schmid, Martin Kamp, Benoit Jouault, Jean-Baptiste Rodriguez, Eric Tournie, Tobias Müller, Ronny Thomale, Gerald Bastard, Frederic Teppe, Fabian Hartmann, Sven Höfling. 2025-09-26. Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics. https://doi.org/10.1126/sciadv.adz2408

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