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Fabian Hartmann

Publications and source records attributed to Fabian Hartmann.

At least 19 recordsLinked to original sources

Beyond Impedance Additivity: A Systematic Nonlinear Perspective on Memristor Associations

We investigate the validity of the superposition principle and impedance additivity in AC circuits containing a memristive device connected in series with a resistor, capacitor, or inductor. While the series association of impedances is a cornerstone of linear circuit theory, its applicability to memory-bearing nonlinear systems remains largely unexplored. Using a state-dependent memristive model, we numerically analyze the stationary current response under sinusoidal excitation and characterize the resulting harmonic spectra, Bode diagrams, and Nyquist plots. To assess whether the fundamental response can still be interpreted through an equivalent-circuit framework, we introduce the concept of an apparent memristor, whose effective parameters are extracted directly from the composite impedance. We show that, although the fundamental harmonic can be accurately reproduced by an apparent equivalent circuit over selected parameter ranges, the effective parameters differ substantially from those of the isolated memristor, revealing a renormalization induced by the coupling to the passive element. More importantly, we identify parameter regimes in which the apparent-circuit description breaks down altogether, particularly for capacitor and inductor-coupled systems, demonstrating that the composite impedance cannot generally be expressed as the sum of independent impedances. These results establish boundaries for the use of equivalent-circuit models in memory-enabled electronic systems and provide practical guidelines for the interpretation of impedance spectroscopy in nonlinear devices exhibiting memory.

cond-mat.mtrl-sci

Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators

Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitations are effectively mitigated through electrostatic control in dual-gated InAs/GaInSb/InAs trilayer quantum wells grown on AlSb quasi-substrates. In macroscopic Hall bars exceeding the phase coherence length, a multi-probe analysis reveals an insulating bulk and a constant edge resistance over a wide electric-field range. In microscopic devices with edge lengths below the phase coherence lengths, the edge resistance remains robust and quantized accross a broad field range, revealing the intrinsic resilience of helical edge channels to electric-field perturbations. Only beyond a threshold value, parasitic edge contributions emerge. These results establish dual gating as a reliable strategy to suppress parasitic conduction while stabilizing helical edge transport, providing a versatile and reproducible platform for tunable topological transport in III-V quantum spin Hall systems.

cond-mat.mes-hall

Phase-Topology Classification of Memristor Hysteresis Loops via Self-Crossings

Memristive devices have revolutionized non-volatile memory and neuromorphic computing, yet the geometry of their hysteresis loops -- in particular, the occurrence and robustness of multiple self-crossings -- remains poorly understood. Here we introduce a topological and algebraic framework that treats the number of transverse self-intersections of a memristor hysteresis loop as a robust integer-valued invariant. Drawing on differential topology, singularity theory, and cusp catastrophe, we employ discriminants and resultants to stratify the six-dimensional parameter space. This approach partitions the parameter space into structurally stable regions separated by explicitly computable catastrophe surfaces. We demonstrate that the crossing number remains strictly invariant under continuous deformations and changes only at self-tangencies or cusp singularities, thereby providing a complete classification of all multi-lobed hysteresis behaviors. These insights bridge device physics with modern singularity theory and suggest a clear roadmap for exploiting higher-order memory effects in next-generation electronics and brain-inspired hardware.

cond-mat.other

Resolving the band alignment of InAs/InAsSb mid-wave-infrared type-II superlattices

In this work, three InAs/InAs$_{0.65}$Sb$_{0.35}$ superlattices with different periods were investigated using photoluminescence and photoreflectance measurements and their band structure was simulated using a 14 bulk-band kp model. The structures were studied by analyzing the evolution of the spectral features in temperature and excitation power to determine the origin of optical transitions. After identifying which of these are related to the superlattice mini-bands, a rich collection of observed higher-order optical transitions was compared with refractive-index calculations. This procedure was used to adjust the parameters of the theoretical model, namely the bowing parameters of the InAsSb valence band offset and bandgap. It was also shown that the spectroscopy of the higher-order states combined with numerical modeling of the refractive index is a powerful tool for improvement of the material parameters, presenting a new approach to material studies of advanced semiconductor heterostructures.

cond-mat.mtrl-sci

Gate-controlled analog memcapacitance in LaAlO3/SrTiO3 interface-based devices

Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here, we demonstrate memcapacitor structures utilizing a quasi 2-dimensional electron gas, formed at the crystalline LaAlO3/SrTiO3 heterointerface, as electrodes and SiO2/SrTiO3 as dielectric layer. The observed memcapacitance originates from the charge localization in a lateral floating gate, while an applied gate voltage enables reversible tuning of the device capacitance. Furthermore, preprogrammed or erased gate biases enable controllable shifts of the capacitance hysteresis window toward positive or negative bias, leading to an enlarged capacitance gap at zero bias. A memcapacitor model developed for this system reproduces the main features of the experimental capacitance hysteresis, capturing the effects of charge fluctuations and dielectric frequency modulation within the oxide layer. The demonstrated low-voltage operation and gate tunability of oxide interface-based memcapacitors highlight their potential for power-efficient, capacitor-based neuromorphic and synaptic electronic architectures.

physics.app-ph

A topological field-effect memristor

Overcoming the limitations of the von Neumann architecture requires new computational paradigms capable of solving complex problems efficiently. Quantum and neuromorphic computing rely on unconventional materials and device functionalities, yet achieving resilience to imperfections and reliable operation remains a major challenge. This has motivated growing interest in topological materials that provide robust and low-power operation while preserving coherence. However, integrating coherent topological transport with non-volatile memory functionality in a single reconfigurable device has remained challenging. In this work, we demonstrate a topological field-effect memristor based on inverted InAs/GaInSb/InAs trilayer quantum wells operating in the quantum spin Hall regime. The intrinsic floating-gate behavior allows one to reconfigure the transistor functionality into memristive functionality with broad electric-field tunability. Unlike other memristor implementations, one resistance state is governed entirely by dissipationless, coherent transport through helical edge channels, while the other arises from incoherent bulk conduction. By combining electrically tunable coherent and incoherent transport with memory functionality, our device realizes a prototypical topological electronic element that integrates coherent transport and adaptive memristive behavior, paving the way for hybrid quantum-neuromorphic architectures.

cond-mat.mes-hall

2D Canonical Approach for Beating the Boltzmann Tyranny Using Memory

The 60 mV$/$decade subthreshold limit at room temperature, coined as the Boltzmann tyranny, remains a fundamental obstacle to the continued down-scaling of conventional transistors. While several strategies have sought to overcome this constraint through non-thermal carrier injection, most rely on ferroelectric-based or otherwise material-specific mechanisms that require complex fabrication and stability control. Here, we develop a universal theoretical framework showing that intrinsic memory effects in nanometric field-effect transistors can naturally bypass this limit. Within the Landauer-B\"uttiker quantum transport formalism, we incorporate charge-trapping mechanisms that dynamically renormalize the conduction band edge. The resulting analytical expression for the subthreshold swing explicitly links memory dynamics to gate efficiency, revealing that a reduced carrier generation rate or enhanced trapping activity leads to sub-thermal switching, thus breaking the Boltzmann barrier. The model captures key experimental features and provides clear, generalizable design principles, establishing memory-assisted transistors as a robust pathway toward ultra-low-power and multifunctional electronic architectures.

physics.app-ph

Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics

The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability, low-temperature operation, and the lack of robust electronic transport have hindered practical implementations. Here, we demonstrate the QSHE in an InAs/GaInSb/InAs trilayer quantum well structure operating at elevated temperatures. This platform meets key criteria for device integration, including scalability, reproducibility, and tunability via electric field. When the Fermi level is positioned within the energy gap, we observe quantized resistance values independent of device length and in both local and nonlocal measurement configurations, confirming the QSHE. Helical edge transport remains stable up to T = 60 K, with further potential for higher-temperature operation. Our findings establish the InAs/GaInSb system as a promising candidate for integration into next-generation devices harnessing topological functionalities, advancing the development of topological electronics.

cond-mat.mes-hall

Electrical Control of Excitons in Bare-MoSe2 and MoSe2/NbSe2 Heterostructure

Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, owing to their strong excitonic responses and atomic thickness. Controlling their light emission electrically is a crucial step towards realizing practical nanoscale optoelectronic devices such as light-emitting diodes and optical modulators. However, photoluminescence (PL) quenching in van der Waals TMDC/metal heterostructures, caused by ultrafast interlayer charge or energy transfer, impedes such electrical modulation. Here, we investigate monolayer-MoSe2/bulk-NbSe2 heterostructures and demonstrate that a vertical electric field can effectively recover the PL intensity up to ~ 80% of bare-MoSe2. Furthermore, our analysis reveals that the room temperature PL intensity can be tuned by nearly three orders of magnitude in bare-MoSe2 and by about one order of magnitude in MoSe2/NbSe2 heterostructures. First-principles calculations incorporating spin-orbit coupling reveal that the perpendicular electric fields drive a transition from a direct to an indirect bandgap, fundamentally altering the optical response in the heterostructure. Unlike bare-MoSe2, the heterostructure exhibits a pronounced thermal dependence of the enhancement factor, implying that exciton lifetime dominates over interfacial transfer processes. Our findings demonstrate reversible, electric-field-driven PL control at a TMDC/metal interface, providing a pathway to electrically tunable light emission and improved contact engineering in two-dimensional optoelectronic devices.

physics.app-ph

Oxide Interface-Based Polymorphic Electronic Devices for Neuromorphic Computing

Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor (CMOS)-technology, faces several critical challenges including scaling limitation of devices [1, 2], separation of computation and memory units [3] and most importantly, overall system energy efficiency [4]. While numerous materials with emergent functionalities have been proposed to overcome these limitations, scalability, reproducibility, and compatibility remain critical obstacles [5, 6]. Here, we demonstrate oxide-interface based polymorphic electronic devices with programmable transistor, memristor, and memcapacitor functionalities by manipulating the quasi-two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures [7, 8] using lateral gates. A circuit utilizing two polymorphic functionalities of transistor and memcapacitor exhibits nonlinearity and short-term memory, enabling implementation in physical reservoir computing. An integrated circuit incorporating transistor and memristor functionalities is utilized for the transition from short- to long-term synaptic plasticity and for logic operations, along with in-situ logic output storage. The same circuit with advanced reconfigurable synaptic logic operations presents high-level multi-input decision-making tasks, such as patient-monitoring in healthcare applications. Our findings pave the way for oxide-based monolithic integrated circuits in a scalable, silicon compatible, energy efficient single platform, advancing both the polymorphic and neuromorphic computings.

cond-mat.dis-nn

A New Approach to Characterize Charge Transport and Hysteresis in Perovskite Solar Cells

Perovskite solar cells (PSCs) have emerged as a promising photovoltaic technology, already achieving efficiencies surpassing 25%. However, effects such as hysteresis are commonly observed due to the interplay of ionic and electronic transport occurring over different timescales. Despite the widespread use of impedance spectroscopy (IS), physical interpretation in PSCs is specially challenging due to memory effects. In this study, we focus on integrating experimental data with an analytical device transport model. The PSCs under investigation were fabricated using a Cs$_{0.17}$FA$_{0.83}$Pb(I$_{0.83}$Br$_{0.17}$)$_3$ active layer between Nb$_2$O$_5$/TiO$_2$ (compact/mesoporous) and Spiro-OMeTAD. Our fully analytical charge transport model incorporates independent charge transport channels, enabling the correlation of experimental observations in both dark and under illumination. We employed IS together with various voltammetry techniques to reveal the dynamics of the transport processes, including voltage pulses and both small and large amplitude sinusoidal excitations. Although small perturbations are commonly used in IS, our findings demonstrate that large sinusoidal excitation provides new valuable insights in the transition from capacitive to inductive-like responses. The proposed model based purely on charge trapping and generation effectively captures device behavior under both small and large voltages without inductive elements, validated through accurate simulations of hysteresis and other electrical phenomena.

physics.app-ph

Microscopic Modeling of Polarization Dynamics in Leaky Dielectrics: Insights into Ferroelectric-Like Behavior

Based on a microscopic model of nonequilibrium carrier generation in a leaky dielectric, we analytically derive hysteresis loops for the dielectric response of non-polar, non-ferroelectric materials. We demonstrate how complex dielectric responses can emerge solely from the influence of transport processes that depend on energy levels, voltage polarity, and asymmetries in charge transfer rates. By combining Electrochemical Impedance Spectroscopy and voltammetry, we address critical questions related to the microscopic mechanisms in poorly conductive systems dominated by displacement currents. The impedance analysis, extended to higher-order harmonics, provides deeper insights into the dynamic behavior of dielectric materials, emphasizing the need to correlate impedance spectroscopy with dielectric spectroscopy for a thorough understanding of dipole relaxation and transport phenomena. Our approach provides a fully analytical framework that directly correlates microscopic charge dynamics with macroscopic dielectric responses, offering enhanced accuracy and predictive capability for systems dominated by displacement currents.

cond-mat.mtrl-sci

From Memory Traces to Surface Chemistry: Decoding REDOX Reactions

Gas and moisture sensing devices leveraging the resistive switching effect in transition metal oxide memristors promise to revolutionize next-generation, nano-scaled, cost-effective, and environmentally sustainable sensor solutions. These sensors encode readouts in resistance state changes based on gas concentration, yet their nonlinear current-voltage characteristics offer richer dynamics, capturing detailed information about REDOX reactions and surface kinetics. Traditional vertical devices fail to fully exploit this complexity. This study demonstrates planar resistive switching devices, moving beyond the Butler-Volmer model. A systematic investigation of the electrochemical processes in Na-doped ZnO with lateral planar contacts reveals intricate patterns resulting from REDOX reactions on the device surface. When combined with advanced algorithms for pattern recognition, allow the analysis of complex switching patterns, including crossings, loop directions, and resistance values, providing unprecedented insights for next-generation complex sensors.

physics.app-ph

Quantized Inverse Design for Photonic Integrated Circuits

The inverse design of photonic integrated circuits (PICs) presents distinctive computational challenges, including their large memory requirements. Advancements in the two-photon polymerization (2PP) fabrication process introduce additional complexity, necessitating the development of more flexible optimization algorithms to enable the creation of multi-material 3D structures with unique properties. This paper presents a memory efficient reverse-mode automatic differentiation framework for finite-difference time-domain (FDTD) simulations that is able to handle complex constraints arising from novel fabrication methods. Our method is based on straight-through gradient estimation that enables non-differentiable shape parametrizations. We demonstrate the effectiveness of our approach by creating increasingly complex structures to solve the coupling problem in PICs. The results highlight the potential of our method for future PIC design and practical applications.

physics.optics

Unified Model for Probing Solar Cell Dynamics via Cyclic Voltammetry and Impedance Spectroscopy

Despite the remarkable progress in emerging solar cell technologies such as hybrid organic-inorganic perovskites, there are still significant limitations related to the stability of the devices and their non-ideal electrical behavior under certain external stimuli. We present a conceptual framework for characterizing photovoltaic devices by integrating cyclic voltammetry (CV) and impedance spectroscopy (IS). This framework is constructed from a microscopic, multi-mode perspective that explicitly accounts for drift, diffusion, displacement, and memory contributions. We derive comprehensive analytical expressions for current-voltage relationships and complex admittance. Our model reveals the inseparable connection between hysteresis behaviors in current-voltage characteristics observed in CV and the apparent capacitive and inductive behaviors seen in IS spectral analysis. We demonstrate how CV and IS naturally complement each other, providing a deeper microscopic understanding of device performance and limitations. Additionally, we establish the relationship between intrinsic material parameters and experimentally accessible extrinsic parameters such as light intensity, temperature, DC bias, voltage amplitude, and frequency. This framework enables unprecedented optimization of solar cell performance, marking a significant advancement towards sustainability.

cond-mat.mtrl-sci

Accuracy Bottlenecks in Impedance Spectroscopy due to Transient Effects

Impedance spectroscopy is vital for material characterization and assessing electrochemical device performance. It provides real-time analysis of dynamic processes such as electrode kinetics, electrons, holes or ion transport, and interfacial or defect driven phenomena. However, the technique is sensitive to experimental conditions, introducing potential variability in results. The intricate interplay of transient effects within the realm of spectral impedance analyses introduces a layer of complexity that may impede straightforward interpretations. This demands a nuanced approach for refining analytical methodologies and ensuring the fidelity of impedance characterization once the dynamic contributions of transient ingredients cannot be disentangled from the underlying steady-state characteristics. In our study, we experimentally identify that the transient effects in a memristor device are most pronounced near an optimal frequency related to intrinsic relaxation times, with these effects diminishing as the frequency varies beyond or below this range. While inherent systematic errors impose a practical limit (accuracy floor) on achievable measurement accuracy, this paper offers qualitative and quantitative insights into how specific procedures affect this limit and how to reduce it in orders of magnitude. Only by effectively addressing these errors we can push beyond this constraint.

cond-mat.mes-hall

Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells

We report on the coexistence of both normal and topological insulating phases in InAs/GaSb bilayer quantum well induced by the built-in electric field tuned optically and electrically. The emergence of topological and normal insulating phases is assessed based on the evolution of the charge carrier densities, the resistivity dependence of the gap via in-plane magnetic fields and the thermal activation of carriers. For the Hall bar device tuned optically, we observe the fingerprints associated with the presence of only the topological insulating phase. For another Hall bar processed identically but with an additional top gate, the coexistence of normal and topological insulating phases is found by electrical tuning. Our finding paves the way for utilizing a new electro-optical tuning scheme to manipulate InAs/GaSb bilayer quantum wells to obtain trivial-topological insulating interfaces in the bulk rather than at the physical edge of the device.

cond-mat.mes-hall

Lingering Times at Resonance: The Case of Sb-based Tunneling Devices

Concurrent natural time scales related to relaxation, recombination, trapping, and drifting processes rule the semiconductor heterostructures' response to external drives when charge carrier fluxes are induced. This paper highlights the role of stoichiometry not only for the quantitative tuning of the electron-hole dynamics but also for significant qualitative contrasts of time-resolved optical responses during the operation of resonant tunneling devices. Therefore, similar device architectures and different compositions have been compared to elucidate the correlation among structural parameters, radiative recombination processes, and electron-hole pair and minority carrier relaxation mechanisms. When these ingredients intermix with the electronic structure in Sb-based tunneling devices, it is proven possible to assess various time scales according to the intensity of the current flux, contrary to what has been observed in As-based tunneling devices with similar design and transport characteristics. These time scales are strongly affected not only by the filling process in the $\Gamma$ and L states in Sb-based double-barrier quantum wells but also by the small separation between these states, compared to similar heterostructures based on As.

cond-mat.mes-hall