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arXiv · 2510.09252

Strained Donor-Bound Excitons in $^{28}$Si

David A. Vogl·Noah L. Braitsch·Başak Ç. Özcan·Niklas S. Vart·M. L. W. Thewalt·Martin S. Brandt
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Abstract

We present a comprehensive experimental study of the neutral donor to donor-bound exciton transition (D$^0$$\rightarrow\,$D$^0$X) in isotopically enriched $^{28}$Si, focusing on the group-V donors P, As, and Sb under finely tuned uniaxial stress along the [100] and [110] crystal axes and magnetic fields from 3.5 mT to 1.7 T. From these measurements, donor-specific deformation potentials are extracted. The uniaxial electron deformation potential $\Xi_\mathrm{u}$ is found to be significantly larger than values reported for other states or transitions in silicon and shows a clear dependence on the donor species, indicating an increased sensitivity of the D$^0$X state to strain and central-cell effects. We also observe a magnetic field dependence of the hole shear deformation potential $d$, suggesting a more complex strain coupling mechanism than captured by standard theory. Diamagnetic shift parameters determined from Zeeman spectra show good agreement with earlier measurements. Our results provide a refined parameter set critical for the design of silicon quantum devices based on D$^0$X transitions.

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David A. Vogl, Noah L. Braitsch, Başak Ç. Özcan, Niklas S. Vart, M. L. W. Thewalt, Martin S. Brandt. 2025-10-10. Strained Donor-Bound Excitons in $^{28}$Si. https://doi.org/10.1103/g6yl-q9bl

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