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arXiv · 2510.11126

In-plane polar domains enhanced energy storage

Yu Lei·Xiaoming Shi·Sihan Yan·Qinghua Zhang·Jiecheng Liu·Sixu Wang·Yu Chen·Jiaou Wang·He Qi·Qian Li·Ting Lin·Jingfen Li·Qing Zhu·Haoyu Wang·Jing Chen·Lincong Shu·Linkun Wang·Han Wu·Xianran Xing
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Abstract

Relaxor ferroelectric thin films are recognized for their ultrahigh power density, rendering them highly promising for energy storage applications in electrical and electronic systems. However, achieving high energy storage performance with chemically homogeneous, environmentally friendly and compositionally stable materials remains challenging. In this work, we present a design of dielectrics with high energy storage performance via an in-plane polar domains incorporating polar nanoregions mechanism. Guided by phase-field simulations, we synthesized La/Si co-doping BaTiO3 solid-solution thin films with high chemical homogeneity to realize high energy storage performance. Given that, we achieve a high energy density of 203.7J/cm3 and an energy efficiency of approximately 80% at an electric field of 6.15MV/cm. This mechanism holds significant promise for the design of next-generation high-performance dielectric materials for energy storage and other advanced functional materials.

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Yu Lei, Xiaoming Shi, Sihan Yan, Qinghua Zhang, Jiecheng Liu, Sixu Wang, Yu Chen, Jiaou Wang, He Qi, Qian Li, Ting Lin, Jingfen Li, Qing Zhu, Haoyu Wang, Jing Chen, Lincong Shu, Linkun Wang, Han Wu, Xianran Xing. 2025-10-13. In-plane polar domains enhanced energy storage. https://arxiv.org/abs/2510.11126

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