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arXiv · 2511.18778

WSe2 p-MOSFETs with Nb-Doped WS2 Contacts Deposited using Atomic Layer Deposition

Shivanshu Mishra·Ruixue Li·Dongjea Seo·Anil Adhikari·Lucas G. Cooper·Rebecca A. Dawley·Ageeth A. Bol·Steven J. Koester
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Abstract

WSe2 p-MOSFETs with Nb-doped WS2 contacts formed using atomic layer deposition are demonstrated. The devices are fabricated using a technique that aligns the contact metallization with the Nb-doped WS2 contacts using a selective oxidation process. Devices with source/drain spacing of 0.15 um have on-state current of 103 uA/um at VDS = -1 V at a channel carrier concentration of ~ 7.5 x 1012 cm-2. The results provide a promising CMOS-compatible pathway to create low-resistance contacts to 2D-channel transistors.

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Shivanshu Mishra, Ruixue Li, Dongjea Seo, Anil Adhikari, Lucas G. Cooper, Rebecca A. Dawley, Ageeth A. Bol, Steven J. Koester. 2025-11-24. WSe2 p-MOSFETs with Nb-Doped WS2 Contacts Deposited using Atomic Layer Deposition. https://arxiv.org/abs/2511.18778

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