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arXiv · 2512.06215

Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM

Md Nahid Haque Shazon·Piyush Kumar·Luqiao Liu·Daniel C. Ralph·Azad Naeemi
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Abstract

This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little to no improvement over spin-transfer-torque (STT) MRAM in terms of write energy. However, emerging SOT materials that provide out-of-plane torques with efficiencies as small as 0.1 can result in significant improvements in the write energy for such 2-terminal devices, especially when the magnet lateral dimensions are scaled down to 30 or 20 nm. Additionally, a novel 2T-SOT MRAM device is proposed that can increase the path electrons pass through the SOT layer; hence, increasing the generated spin current and the energy efficiency of the device. Our benchmarking results indicate that an out-of-plane SOT efficiency of 0.051 for 20nm wide devices can result in write energies approaching SRAM at the 7nm technology node.

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Md Nahid Haque Shazon, Piyush Kumar, Luqiao Liu, Daniel C. Ralph, Azad Naeemi. 2025-12-05. Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM. https://arxiv.org/abs/2512.06215

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