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arXiv · 2601.02628

Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices

Xiongfang Liu·Kaijian Xing·Chi Sin Tang·Shuo Sun·Pan Chen·Dong-Chen Qi·Mark B. H. Breese·Michael S. Fuhrer·Andrew T. S. Wee·Xinmao Yin
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Abstract

The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic technology faces constraints in material thickness scaling and energy efficiency. Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as promising candidates for next-generation nanoelectronics and optoelectronic applications, boasting high electron mobility, mechanical strength, and a customizable band gap. Despite these merits, the Fermi level pinning effect introduces uncontrollable Schottky barriers at metal-2D-TMD contacts, challenging prediction through the Schottky-Mott rule. These barriers fundamentally lead to elevated contact resistance and limited current-delivery capability, impeding the enhancement of 2D-TMD transistor and integrated circuit properties. In this review, we succinctly outline the Fermi pinning effect mechanism and peculiar contact resistance behavior at metal/2D-TMD interfaces. Subsequently, highlights on the recent advances in overcoming contact resistance in 2D-TMDs devices, encompassing interface interaction and hybridization, van der Waals (vdW) contacts, prefabricated metal transfer and charge-transfer doping will be addressed. Finally, the discussion extends to challenges and offers insights into future developmental prospects.

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BibTeXRIS

Xiongfang Liu, Kaijian Xing, Chi Sin Tang, Shuo Sun, Pan Chen, Dong-Chen Qi, Mark B. H. Breese, Michael S. Fuhrer, Andrew T. S. Wee, Xinmao Yin. 2026-01-06. Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices. https://doi.org/10.1016/j.pmatsci.2024.101390

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