Device variability of Josephson junctions induced by interface roughness

Abstract

As quantum processors scale to large qubit numbers, device-to-device variability emerges as a critical challenge. Superconducting qubits are commonly realized using Al/AlO$_{\text{x}}$/Al Josephson junctions operating in the tunneling regime, where even minor variations in device geometry can lead to substantial performance fluctuations. In this work, we develop a quantitative model for the variability of the Josephson energy $E_{J}$ induced by interface roughness at the Al/AlO$_{\text{x}}$ interfaces. The roughness is modeled as a Gaussian random field characterized by two parameters: the root-mean-square roughness amplitude $\sigma $ and the transverse correlation length $\xi $. These parameters are extracted from the literature and molecular dynamics simulations. Quantum transport is treated using the Ambegaokar--Baratoff relation combined with a local thickness approximation. Numerical simulations over $5,000$ Josephson junctions show that $E_{J}$ follows a log-normal distribution. The mean value of $E_{J}$ increases with $\sigma $ and decreases slightly with $\xi $, while the variance of $E_{J}$ increases with both $\sigma $ and $\xi $. These results paint a quantitative and intuitive picture of Josephson energy variability induced by surface roughness, with direct relevance for junction design.