arXiv subjects

Félix Beaudoin

Publications and source records attributed to Félix Beaudoin.

17 recordsLinked to original sources

arXiv2026

Josephson energy of superconducting junctions: amorphous versus crystalline tunnel barriers

The Josephson energy $E_J$ is a key parameter governing the properties of transmon superconducting qubits. In Al/AlO$_x$/Al junctions, $E_J$ is set by electron tunneling through an ultrathin oxide barrier and therefore depends exponentially on the atomic structure of the barrier. We compute $E_J$ by first-principles device modeling based on the NEGF-DFT quantum-transport method, comparing a junction with a crystalline Al$_2$O$_3$ barrier against ten junctions with melt--quenched amorphous Al$_2$O$_3$ barriers of the same thickness. From the Fermi-level transmission and the Ambegaokar--Baratoff relation, we obtain a mean $E_J/h$ of $2.78$ GHz for the amorphous ensemble, with a standard deviation of $4.67$ GHz, compared with $0.73$ GHz for the crystalline reference; individual amorphous values span nearly two orders of magnitude. Scattering-state analysis shows that transport is quantum tunneling and that the variability originates from stoichiometric inhomogeneity of the amorphous oxide: Al-rich, low-barrier regions can connect into percolation-like tunneling pathways that strongly enhance the conductance. A realistic $200\times200$ nm$^2$ junction self-averages over more than $2\times10^4$ such microscopic regions. These results establish a quantitative atomistic route from oxide microstructure to the superconducting-circuit energy scale $E_J$.

quant-ph↗

arXiv2026

Quantum-Device Simulation of Optical Decoherence of Hole-Spin Qubits in Self-Assembled Quantum Dots

Spin-photon interfaces are essential for communications between distant spin qubits in quantum technologies, but the interband optical excitation can also damp electrically driven hole-spin Rabi oscillations in semiconductor self-assembled quantum dots (SAQDs). We report a device-level modeling workflow that integrates realistic SAQD geometry and multiband electronic-structure analysis with models of electrically driven spin control, interband optical transitions, and open-system dynamics. This workflow enables device-level estimation of Rabi-oscillation damping arising from repeated interband absorption-emission cycles. As an example, for a gated GaAs SAQD subjected to a uniform magnetic field $B_0$ along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At $B_0=2$ T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.

cond-mat.mes-hall↗

arXiv2026

Constraints on Atomistic Disorder for Scalable Electron Spin Shuttling

Electron spin shuttling, the gate-controlled, coherent transport of electrons between qubit registers, increases qubit connectivity and enables efficient quantum-error-correction schemes. It is emerging as a key enabler of scalable silicon spin-qubit quantum computing. As an electron travels over micrometers, it encounters angstrom-scale disorder, causing fluctuations in its confinement potential, valley splitting, and valley phase. These lead to leakage into the valley-excited state, limiting high-fidelity shuttling speeds. Accurate predictions of shuttling fidelities thus require modeling tools that link atomistic and mesoscopic physics. We develop a multiscale simulation workflow to quantify these effects in the experimentally-realized Si/SiGe "QuBus" conveyor-belt architecture. First, we resolve the time-dependent, gate-controlled device electrostatics by solving the Poisson equation using the finite-element method. Second, we construct conveyor belt atomic structures with realistic atomistic disorder (random alloying and interface roughness); we resolve strain atomistically using the Keating valence force-field model. Third, we perform position-tracked atomistic tight-binding simulations of the shuttled electrons to obtain their time-dependent valley splittings and phases. Finally, these time traces parametrize a time-dependent Schrödinger equation, which we solve to predict valley dynamics. We find that interface roughness strongly suppresses shuttling fidelities, with a sharp anomaly near the atomic-layer scale. Overall, our predictions set practical, quantitative guidelines to realize scalable, high-fidelity shuttling in silicon spin-qubit architectures.

quant-ph↗

arXiv2026

First-principles predictions of band alignment in strained Si/Si1-xGex and Ge/Si1-xGex heterostructures

Accurate band offsets are essential for predictive continuum modeling of nanostructures such as quantum wells and quantum dots formed in strained Si/Si1-xGex and Ge/Si1-xGex heterostructures. Experimental offset data for these systems remain sparse away from endpoint compositions, making composition-dependent design difficult. We use atomistic first-principles density functional theory to compute valence- and conduction-band offsets across the full range 0 <= x <= 1. Random alloying is treated with special quasirandom structures, interface lineup terms are extracted from macroscopically averaged local Kohn-Sham potentials in thick periodic superlattices, valence-band spin-orbit coupling is included through species-resolved Mulliken weights, and conduction-band edges are refined using the screened hybrid Heyd-Scuseria-Ernzerhof functional. The resulting offsets show pronounced composition nonlinearity beyond the linear models explored in previous works, agree with experimental benchmarks, and reproduce the high-Ge slope change in the relaxed-alloy band gap. Analytic fitting expressions are provided for direct use in simulations, facilitating practical design of modern quantum technology devices.

cond-mat.mes-hall↗

arXiv2026

Analysis of Hydrogen Contamination in Al/AlOx/Al Josephson Junctions

Hydrogen contamination in Josephson junctions is a potential source of device-to-device variability and two-level-system loss in superconducting qubits. In this work, we investigate hydrogen incorporation in oxidized aluminum barriers by combining molecular dynamics simulations with atomistic quantum transport calculations. The oxide growth simulations are performed using CHGNet for Al surfaces exposed to dense O$_{\text{2}}$ and H$_{\text{2}% }$O environments, yielding amorphous AlO$_{\text{x}}$ layers with hydrogen content comparable to experimentally relevant levels. From $400$ statistically independent samples, we find that the number of H atoms in the oxide is well described by a beta-binomial distribution, reflecting correlations induced by the self-limiting oxidation process. Structural analysis shows that most hydrogen atoms reside near the AlO$_{\text{x}}$ surface and predominantly form Al-OH and Al-OH-Al motifs. To assess the impact of hydrogen on transport, we construct Al/Al$_{\text{2}}$O$_{\text{3}} $/Al junction models and perform NEGF-DFT calculations with NanoDCAL, using a GGA+U scheme to calibrate the band gap and band alignment. H atoms are found to increase the transmission coefficient near the Fermi level and shift the electronic structure in a manner consistent with effective p-type doping. By combining the H atom number statistics from molecular dynamics with the transmission coefficients from quantum transport calculations, we obtain a probability distribution for the Josephson energy. For a Josephson junction with an average hydrogen content of $2.56$ at.\%, the resulting Josephson energy is predicted to be $% E_{J}/h=10.92\pm 0.26$ GHz. These results provide an atomistic picture of hydrogen contamination and an estimate of device variability in Josephson junctions.

quant-ph↗

arXiv2026

Device variability of Josephson junctions induced by interface roughness

As quantum processors scale to large qubit numbers, device-to-device variability emerges as a critical challenge. Superconducting qubits are commonly realized using Al/AlO$_{\text{x}}$/Al Josephson junctions operating in the tunneling regime, where even minor variations in device geometry can lead to substantial performance fluctuations. In this work, we develop a quantitative model for the variability of the Josephson energy $E_{J}$ induced by interface roughness at the Al/AlO$_{\text{x}}$ interfaces. The roughness is modeled as a Gaussian random field characterized by two parameters: the root-mean-square roughness amplitude $σ$ and the transverse correlation length $ξ$. These parameters are extracted from the literature and molecular dynamics simulations. Quantum transport is treated using the Ambegaokar--Baratoff relation combined with a local thickness approximation. Numerical simulations over $5,000$ Josephson junctions show that $E_{J}$ follows a log-normal distribution. The mean value of $E_{J}$ increases with $σ$ and decreases slightly with $ξ$, while the variance of $E_{J}$ increases with both $σ$ and $ξ$. These results paint a quantitative and intuitive picture of Josephson energy variability induced by surface roughness, with direct relevance for junction design.

quant-ph↗

arXiv2019

Two-qubit spectroscopy of spatiotemporally correlated quantum noise in superconducting qubits

Noise that exhibits significant temporal and spatial correlations across multiple qubits can be especially harmful to both fault-tolerant quantum computation and quantum-enhanced metrology. However, a complete spectral characterization of the noise environment of even a two-qubit system has not been reported thus far. We propose and experimentally validate a protocol for two-qubit dephasing noise spectroscopy based on continuous control modulation. By combining ideas from spin-locking relaxometry with a statistically motivated robust estimation approach, our protocol allows for the simultaneous reconstruction of all the single-qubit and two-qubit cross-correlation spectra, including access to their distinctive non-classical features. Only single-qubit control manipulations and state-tomography measurements are employed, with no need for entangled-state preparation or readout of two-qubit observables. While our experimental validation uses two superconducting qubits coupled to a shared engineered noise source, our methodology is portable to a variety of dephasing-dominated qubit architectures. By pushing quantum noise spectroscopy beyond the single-qubit setting, our work paves the way to characterizing spatiotemporal correlations in both engineered and naturally occurring noise environments.

quant-ph↗

arXiv2019

Non-Gaussian noise spectroscopy with a superconducting qubit sensor

Accurate characterization of the noise influencing a quantum system of interest has far-reaching implications across quantum science, ranging from microscopic modeling of decoherence dynamics to noise-optimized quantum control. While the assumption that noise obeys Gaussian statistics is commonly employed, noise is generically non-Gaussian in nature. In particular, the Gaussian approximation breaks down whenever a qubit is strongly coupled to discrete noise sources or has a non-linear response to the environmental degrees of freedom. Thus, in order to both scrutinize the applicability of the Gaussian assumption and capture distinctive non-Gaussian signatures, a tool for characterizing non-Gaussian noise is essential. Here, we experimentally validate a quantum control protocol which, in addition to the spectrum, reconstructs the leading higher-order spectrum of engineered non-Gaussian dephasing noise using a superconducting qubit as a sensor. This first experimental demonstration of non-Gaussian noise spectroscopy represents a major step toward demonstrating a complete spectral estimation toolbox for quantum devices.

quant-ph↗

arXiv2019

Extending comb-based spectral estimation to multiaxis quantum noise

We show how to achieve full spectral characterization of general multiaxis additive noise. Our pulsed spectral estimation technique is based on sequence repetition and frequency-comb sampling and is applicable even to models where a large qubit energy-splitting is present (as is typically the case for spin qubits in semiconductors, for example), as long as the noise is stationary and a second-order (Gaussian) approximation to the controlled reduced dynamics is viable. Our new result is crucial to extending the applicability of these protocols, now standard in dephasing-dominated platforms such as silicon-based qubits, to experimental platforms where both $T_1$ and $T_2$ processes are significant, such as superconducting qubits.

quant-ph↗

arXiv2018

Ramsey Interferometry in Correlated Quantum Noise Environments

We quantify the impact of spatio-temporally correlated Gaussian quantum noise on frequency estimation by Ramsey interferometry. While correlations in a classical noise environment can be exploited to reduce uncertainty relative to the uncorrelated case, we show that quantum noise environments with frequency asymmetric spectra generally introduce additional sources of uncertainty due to uncontrolled entanglement of the sensing system mediated by the bath. For the representative case of collective noise from bosonic sources, and experimentally relevant collective spin observables, we find that the uncertainty can increase exponentially with the number of probes. As a concrete application, we show that correlated quantum noise due to a lattice vibrational mode can preclude superclassical precision scaling in current amplitude sensing experiments with trapped ions.

quant-ph↗

arXiv2017

Hamiltonian engineering for robust quantum state transfer and qubit readout in cavity QED

Quantum state transfer into a memory, state shuttling over long distances via a quantum bus, and high-fidelity readout are important tasks for quantum technology. Realizing these tasks is challenging in the presence of realistic couplings to an environment. Here, we introduce and assess protocols that can be used in cavity QED to perform high-fidelity quantum state transfer and fast quantum nondemolition qubit readout through Hamiltonian engineering. We show that high-fidelity state transfer between a cavity and a single qubit can be performed, even in the limit of strong dephasing due to inhomogeneous broadening. We generalize this result to state transfer between a cavity and a logical qubit encoded in a collective mode of a large ensemble of $N$ physical qubits. Under a decoupling sequence, we show that inhomogeneity in the ensemble couples two collective bright states to only two other collective modes, leaving the remaining $N-3$ single-excitation states dark. Moreover, we show that large signal-to-noise and high single-shot fidelity can be achieved in a cavity-based qubit readout, even in the weak-coupling limit. These ideas may be important for novel systems coupling single spins to a microwave cavity.

quant-ph↗

arXiv2016

Coupling a single electron spin to a microwave resonator: Controlling transverse and longitudinal couplings

Microwave-frequency superconducting resonators are ideally suited to perform dispersive qubit readout, to mediate two-qubit gates, and to shuttle states between distant quantum systems. A prerequisite for these applications is a strong qubit-resonator coupling. Strong coupling between an electron-spin qubit and a microwave resonator can be achieved by correlating spin- and orbital degrees of freedom. This correlation can be achieved through the Zeeman coupling of a single electron in a double quantum dot to a spatially inhomogeneous magnetic field generated by a nearby nanomagnet. In this paper, we consider such a device and estimate spin-resonator couplings of order ~ 1 MHz with realistic parameters. Further, through realistic simulations, we show that precise placement of the double dot relative to the nanomagnet allows to select between a purely longitudinal coupling (commuting with the bare spin Hamiltonian) and a purely transverse (spin non-conserving) coupling. Additionally, we suggest methods to mitigate dephasing and relaxation channels that are introduced in this coupling scheme. This analysis gives a clear route toward the realization of coherent state transfer between a microwave resonator and a single electron spin in a GaAs double quantum dot with a fidelity above 90%. Improved dynamical decoupling sequences, low-noise environments, and longer-lived microwave cavity modes may lead to substantially higher fidelities in the near future.

cond-mat.mes-hall↗

arXiv2015

Microscopic models for charge-noise-induced dephasing of solid-state qubits

Several experiments have shown qubit coherence decay of the form $\mathrm{exp}[-(t/T_2)^α]$ due to environmental charge-noise fluctuations. We present a microscopic description for temperature dependences of the parameters $T_2$ and $α$. Our description is appropriate to qubits in semiconductors interacting with spurious two-level charge fluctuators coupled to a thermal bath. We find distinct power-law dependences of $T_2$ and $α$ on temperature depending on the nature of the interaction of the fluctuators with the associated bath. We consider fluctuator dynamics induced by first- and second-order tunneling with a continuum of delocalized electron states. We also study one- and two-phonon processes for fluctuators in either GaAs or Si. These results can be used to identify dominant charge-dephasing mechanisms and suppress them.

cond-mat.mes-hall↗

arXiv2014

Enhanced hyperfine-induced spin dephasing in a magnetic-field gradient

Magnetic-field gradients are important for single-site addressability and electric-dipole spin resonance of spin qubits in semiconductor devices. We show that these advantages are offset by a potential reduction in coherence time due to the non-uniformity of the magnetic field experienced by a nuclear-spin bath interacting with the spin qubit. We theoretically study spins confined to quantum dots or at single donor impurities, considering both free-induction and spin-echo decay. For quantum dots in GaAs, we find that, in a realistic setting, a magnetic-field gradient can reduce the Hahn-echo coherence time by almost an order of magnitude. This problem can, however, be resolved by applying a moderate external magnetic field to enter a motional averaging regime. For quantum dots in silicon, we predict a cross-over from non-Markovian to Markovian behavior that is unique to these devices. Finally, for very small systems such as single phosphorus donors in silicon, we predict a breakdown of the common Gaussian approximation due to finite-size effects.

quant-ph↗

arXiv2013

First-order sideband transitions with flux-driven asymmetric transmon qubits

We demonstrate rapid, first-order sideband transitions between a superconducting resonator and a frequency-modulated transmon qubit. The qubit contains a substantial asymmetry between its Josephson junctions leading to a linear portion of the energy band near the resonator frequency. The sideband transitions are driven with a magnetic flux signal of a few hundred MHz coupled to the qubit. This modulates the qubit splitting at a frequency near the detuning between the dressed qubit and resonator frequencies, leading to rates up to 85 MHz for exchanging quanta between the qubit and resonator.

cond-mat.supr-con↗

arXiv2012

First-order sidebands in circuit QED using qubit frequency modulation

Sideband transitions have been shown to generate controllable interaction between superconducting qubits and microwave resonators. Up to now, these transitions have been implemented with voltage drives on the qubit or the resonator, with the significant disadvantage that such implementations only lead to second-order sideband transitions. Here we propose an approach to achieve first-order sideband transitions by relying on controlled oscillations of the qubit frequency using a flux-bias line. Not only can first-order transitions be significantly faster, but the same technique can be employed to implement other tunable qubit-resonator and qubit-qubit interactions. We discuss in detail how such first-order sideband transitions can be used to implement a high fidelity controlled-NOT operation between two transmons coupled to the same resonator.

quant-ph↗

arXiv2011

Dissipation and Ultrastrong Coupling in Circuit QED

Cavity and circuit QED study light-matter interaction at its most fundamental level. Yet, this interaction is most often neglected when considering the coupling of this system with an environment. In this paper, we show how this simplification, which leads to the standard quantum optics master equation, is at the root of unphysical effects. Including qubit relaxation and dephasing, and cavity relaxation, we derive a master equation that takes into account the qubit-resonator coupling. Special attention is given to the ultrastrong coupling regime, where the failure of the quantum optical master equation is manifest. In this situation, our model predicts an asymmetry in the vacuum Rabi splitting that could be used to probe dephasing noise at unexplored frequencies. We also show how fluctuations in the qubit frequency can cause sideband transitions, squeezing, and Casimir-like photon generation.

quant-ph↗