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arXiv · 2602.14173

Disorder-driven stochastic dynamics in Mott resistive-switching systems

David J. Alspaugh·Lorenzo Fratino·Nareg Ghazikhanian·Ivan K. Schuller·Marcelo Rozenberg
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Abstract

Controlled disorder in correlated materials provides a new route to emergent stochastic dynamics in neuromorphic hardware. Here we show that focused ion beam irradiation in VO$_{2}$- and V$_{2}$O$_{3}$-based resistive-switching oscillators induces a transition from regular periodic oscillations to strongly irregular stochastic firing, while simultaneously reducing the required switching energy by orders of magnitude. Under an applied electric field, these materials undergo a volatile insulator-to-metal transition characterized by the formation of percolating metallic filaments within an insulating bulk. Using numerical simulations based on the Mott resistor network, we demonstrate that defect-induced modifications to filament nucleation and stability drive these devices into stochastic oscillatory regimes. These results are validated by experimental measurements on irradiated VO$_{2}$ and V$_{2}$O$_{3}$ devices.

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David J. Alspaugh, Lorenzo Fratino, Nareg Ghazikhanian, Ivan K. Schuller, Marcelo Rozenberg. 2026-02-15. Disorder-driven stochastic dynamics in Mott resistive-switching systems. https://arxiv.org/abs/2602.14173

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