arXiv subjects

Lorenzo Fratino

Publications and source records attributed to Lorenzo Fratino.

9 recordsLinked to original sources

arXiv2026

Disorder-driven stochastic dynamics in Mott resistive-switching systems

Controlled disorder in correlated materials provides a new route to emergent stochastic dynamics in neuromorphic hardware. Here we show that focused ion beam irradiation in VO$_{2}$- and V$_{2}$O$_{3}$-based resistive-switching oscillators induces a transition from regular periodic oscillations to strongly irregular stochastic firing, while simultaneously reducing the required switching energy by orders of magnitude. Under an applied electric field, these materials undergo a volatile insulator-to-metal transition characterized by the formation of percolating metallic filaments within an insulating bulk. Using numerical simulations based on the Mott resistor network, we demonstrate that defect-induced modifications to filament nucleation and stability drive these devices into stochastic oscillatory regimes. These results are validated by experimental measurements on irradiated VO$_{2}$ and V$_{2}$O$_{3}$ devices.

cond-mat.str-el↗

arXiv2025

Enhanced stochasticity in irradiated vanadium oxide oscillators

Insulator-to-metal transition materials are highly sensitive to even minute deviations of stoichiometry, lattice defects, and disorder, which provides opportunities to engineer their electrical switching characteristics. Using V2O3 as a prototypical metal-insulator transition resistive switching material, we demonstrate that localized focused ion beam irradiation can induce stochastic oscillatory dynamics in simple two-terminal switching devices. After irradiating the material, we observed an unusual dynamic regime where the voltage induced metallic state momentarily collapses into an insulating state, which results in a rapid current flickering that is qualitatively different from the conventional current spiking in a Pearson-Anson type oscillatory circuit implemented using the pristine material. Furthermore, the current flickering timing in the irradiated devices becomes progressively more random and more sparse with increasing input voltage, resulting in nonlinear and nondeterministic oscillatory behavior. The irradiation also leads to a dramatic reduction in switching power required to induce the current oscillations. These results are elucidated through random resistor network simulations which indicate that a small number of local sites can control the electrical metal-insulator transition switching properties in large devices with high defect concentration. Our results show that selective focused ion beam irradiation provides exciting prospects for engineering and tuning novel stochastic behaviors in emergent technologies that rely on the intrinsic randomness of physical processes.

cond-mat.dis-nn↗

arXiv2025

Electrically induced negative differential resistance states mediated by oxygen octahedra coupling in manganites for neuronaldynamics

The precipitous rise of consumer network applications reiterates the urgency to redefine computing hardware with low power footprint. Neuromorphic computing utilizing correlated oxides offers an energy-efficient solution. By designing anisotropic functional properties in LSMO on a twinned LAO substrate and driving it out of thermodynamic equilibrium, we demonstrate two distinct negative differential resistance states in such volatile memristors. These were harnessed to exhibit oscillatory dynamics in LSMO at different frequencies and an artificial neuron with leaky integrate-and-fire dynamics. A material based modelling incorporating bond angle distortions in neighboring perovskites and capturing the inhomogeneity of domain distribution and propagation explains both the NDR regimes. Our findings establish LSMO as an important material for neuromorphic computing hardware.

cond-mat.mtrl-sci↗

arXiv2024

Laser-induced quenching of metastability at the Mott-insulator to metal transition

There is growing interest in strongly correlated insulator thin films because the intricate interplay of their intrinsic and extrinsic state variables causes memristive behavior that might be used for bio-mimetic devices in the emerging field of neuromorphic computing. In this study we find that laser irradiation tends to drive V$_2$O$_3$ from supercooled/superheated metastable states towards thermodynamic equilibrium, most likely in a non-thermal way. We study thin films of the prototypical Mott-insulator V$_2$O$_3$, which show spontaneous phase separation into metal-insulator herringbone domains during the Mott transition. Here, we use low-temperature microscopy to investigate how these metal-insulator domains can be modified by scanning a focused laser beam across the thin film surface. We find that the response depends on the thermal history: When the thin film is heated from below the Mott transition temperature, the laser beam predominantly induces metallic domains. On the contrary, when the thin film is cooled from a temperature above the transition, the laser beam predominantly induces insulating domains. Very likely, the V$_2$O$_3$ thin film is in a superheated or supercooled state, respectively, during the first-order phase transition, and the perturbation by a laser beam drives these metastable states into stable ones. This way, the thermal history is locally erased. Our findings are supported by a phenomenological model with a laser-induced lowering of the energy barrier between the metastable and equilibrium states.

cond-mat.str-el↗

arXiv2023

Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition

Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing local switching, which provides an opportunity to tune the electronic and magnetic state of the device by applying voltage. Here we explore the magnetotransport properties in the ferromagnetic oxide (La,Sr)MnO3 (LSMO) during the electrical triggering of an intrinsic metal-insulator transition (MIT) that produces volatile resistive switching. This switching occurs in a characteristic spatial pattern, i.e., the formation of an insulating barrier perpendicular to the current flow, enabling an electrically actuated ferromagnetic-paramagnetic-ferromagnetic phase separation. At the threshold voltage of the MIT triggering, both anisotropic and colossal magnetoresistances exhibit anomalies including a large increase in magnitude and a sign flip. Computational analysis revealed that these anomalies originate from the coupling between the switching-induced phase separation state and the intrinsic magnetoresistance of LSMO. This work demonstrates that driving the MIT material into an out-of-equilibrium resistive switching state provides the means to electrically control of the magnetotransport phenomena.

cond-mat.mtrl-sci↗

arXiv2023

Light induced decoupling of electronic and magnetic properties in manganites

The strongly correlated material La0.7Sr0.3MnO3 (LSMO) exhibits metal-to-insulator and magnetic transition near room temperature. Although the physical properties of LSMO can be manipulated by strain, chemical doping, temperature, or magnetic field, they often require large external stimuli. To include additional flexibility and tunability, we developed a hybrid optoelectronic heterostructure that uses photocarrier injection from cadmium sulfide (CdS) to an LSMO layer to change its electrical conductivity. LSMO exhibits no significant optical response, however, the CdS/LSMO heterostructures show an enhanced conductivity, with ~ 37 % resistance drop, at the transition temperature under light stimuli. This enhanced conductivity in response to light is comparable to the effect of a 9 T magnetic field in pure LSMO. Surprisingly, the optical and magnetic responses of CdS/LSMO heterostructures are decoupled and exhibit different effects when both stimuli are applied. This unexpected behavior shows that heterostructuring strongly correlated oxides may require a new understanding of the coupling of physical properties across the transitions and provide the means to implement new functionalities.

cond-mat.mtrl-sci↗

arXiv2023

Characteristic lengthscales of the electrically-induced insulator-to-metal transition

Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a conducting filament. While this phenomenon has attracted much attention due to potential applications, many fundamental questions remain unaddressed. One of them is its characteristic lengths: what sets the size of these filaments, and how does this impact resistive switching properties. Here we use a combination of wide-field and scattering-type scanning near-field optical microscopies to characterize filament formation in NdNiO3 and SmNiO3 thin films. We find a clear trend: smaller filaments increase the current density, yielding sharper switching and a larger resistive drop. With the aid of numerical simulations, we discuss the parameters controlling the filament width and, hence, the switching properties.

cond-mat.mtrl-sci↗

arXiv2020

Resistive switching in reverse: voltage driven formation of a transverse insulating barrier

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting filaments parallel to the current flow, has been an active research topic. Here we present the discovery of an opposite, metal-to-insulator switching that proceeds via nucleation and growth of an insulating barrier perpendicular to the driving current. The barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. Electrically inducing a transverse barrier enables a novel approach to voltage-controlled magnetism. By triggering a metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism can be achieved by a global voltage bias applied to the whole device.

cond-mat.mtrl-sci↗

arXiv2014

Mirror-induced decoherence in hybrid quantum-classical theory

We re-analyse the optomechanical interferometer experiment proposed by Marshall, Simon, Penrose and Bouwmeester with the help of a recently developed quantum-classical hybrid theory. This leads to an alternative evaluation of the mirror induced decoherence. Surprisingly, we find that it behaves essentially in the same way for suitable initial conditions and experimentally relevant parameters, no matter whether the mirror is considered a classical or quantum mechanical object. We discuss the parameter ranges where this result holds and possible implications for a test of spontaneous collapse models, for which this experiment has been designed.

quant-ph↗