Atomically Precise Electron Beam Sculpting of Bilayer h-BN: The Role of Crystallographic Orientation and Milling Strategy

Abstract

Achieving atomic precision in top-down manufacturing remains a fundamental challenge nanofabrication technology. Here, the focused electron beam of a scanning transmission electron microscope is used to demonstrate atomically precise sculpting of hexagonal boron nitride (h-BN) bilayers, achieving nanoribbons as narrow as 6 {\AA} with atomically smooth edges. The key to this precision lies in understanding how the underlying atomic structure, particularly in twisted bilayer systems, influences the milling process. High-angle annular dark-field imaging combined with multislice simulations reveals distinct intensity signatures that allow identification of different stacking arrangements within moir\'e patterns. Mathematical analysis of moir\'e lattices provides a predictive framework for determining optimal cutting directions, with cuts along armchair directions yielding superior edge quality compared to zigzag orientations. Surprisingly, a sequential milling approach, where a small electron beam subscan area is translated during the process, produces significantly better results than parallel milling of the entire target region. To understand these differences we implemented a stochastic milling model that reveals that sequential milling minimizes unwanted exposure to surrounding material through beam tail effects. These findings establish a framework for achieving atomic precision in electron beam sculpting of two-dimensional materials and provide fundamental insights applicable to the broader challenge of top-down nanofabrication.