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arXiv · 2603.01271

The completed High-Low method for interface state density analysis in MOS capacitors

Brian D. Rummel·Sarit Dhar·Robert J. Kaplar
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Abstract

Interface state densities, $D_{IT}$, in metal-oxide-semiconductor (MOS) capacitors are rarely reported in the accumulation energy range. It is recognized that the determination of $D_{IT}$ in accumulation is fundamentally obscured by small inaccuracies in the user-defined oxide capacitance, $C_{OX}$. This source of error prevents the High-Low frequency technique from reporting accumulation $D_{IT}$, even for sufficiently fast high-frequency measurements. To resolve this, an electrostatic constraint that is uniquely satisfied by a physically consistent $C_{OX}$ is derived from the established theory, thereby completing the High-Low framework. The "completed" framework's theoretical validity is confirmed using simulated capacitance data for an n-SiC MOS structure, and the method's frequency limitations are demonstrated. This analytical advancement ensures a physically consistent extraction of $D_{IT}$ near the band edge, overcoming a fundamental limitation in MOS capacitor characterization.

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Brian D. Rummel, Sarit Dhar, Robert J. Kaplar. 2026-03-01. The completed High-Low method for interface state density analysis in MOS capacitors. https://arxiv.org/abs/2603.01271

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