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arXiv · 2603.02340

Orbital to charge current conversion in copper oxide heterostructures

S. Vojkovic·K. Cancino·G. Rodríguez·E. Burgos·G. Herrera·C. Gonzalez-Fuentes·J. Palma·T. V. M. Sreekanth·J. Denardin·R. L. Rodríguez-Suárez·S. Oyarzún
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Abstract

We investigate the orbital-to-charge current conversion in CoFeB|CuO bilayers as a function of CuO thickness, employing orbital pumping via ferromagnetic resonance. The dynamic injection of orbital angular momentum into the CuO layer generates a transverse voltage through the Inverse Orbital Hall Effect (IOHE). By systematically varying the CuO thickness from 2 nm to 30 nm, we observe a pronounced dependence of the IOHE-induced voltage on the CuO layer thickness, indicating efficient orbital-to-charge conversion. These results highlight the key role of the orbital degree of freedom in orbitronics and provide insights into the potential of transition-metal oxides for next-generation orbitronic devices.

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S. Vojkovic, K. Cancino, G. Rodríguez, E. Burgos, G. Herrera, C. Gonzalez-Fuentes, J. Palma, T. V. M. Sreekanth, J. Denardin, R. L. Rodríguez-Suárez, S. Oyarzún. 2026-03-02. Orbital to charge current conversion in copper oxide heterostructures. https://arxiv.org/abs/2603.02340

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