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arXiv · 2603.02506

Room-temperature magnetic p-n junctions for charge-and-spin diodes

Yuzhang Jiao·Yutong Wang·Xiangning Du·You Ba·Yingqi Zhang·Zhiwei Tang·Xiangrong Wang·Tiantian Chai·Xiaoke Mu·Cheng Song·Kefu Yao·Zhengjun Zhang·Yonggang Zhao·Na Chen
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Abstract

Non-magnetic p-n junctions have been fundamental components in the silicon era, serving as the backbone for nearly all Si-based semiconductor devices, including transistors. To tackle challenges such as scaling limitations, excessive latency, and high-power consumption in Si-based electronics, we develop magnetic p-n junctions composed of a p-type amorphous magnetic semiconductor (p-AMS) and n-type Si. These charge-and-spin junctions exhibit typical diode characteristics for charge current, along with distinctive spin diode features. By manipulating spin-polarized space charges, we observed a giant magnetic enhancement of approximately 24.36% at a breakdown current of 5 mA, and an impressive 29-fold increase in magnetic moments for p-AMS. The observed spin behavior is attributed to space charge effects or carrier depletion in the p-AMS with extended hole states.

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Yuzhang Jiao, Yutong Wang, Xiangning Du, You Ba, Yingqi Zhang, Zhiwei Tang, Xiangrong Wang, Tiantian Chai, Xiaoke Mu, Cheng Song, Kefu Yao, Zhengjun Zhang, Yonggang Zhao, Na Chen. 2026-03-03. Room-temperature magnetic p-n junctions for charge-and-spin diodes. https://arxiv.org/abs/2603.02506

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