arXiv subjects

Xiaoke Mu

Publications and source records attributed to Xiaoke Mu.

5 recordsLinked to original sources

arXiv2026

Accurate Nanoscale Mapping of Electric Fields across Random Grain Boundaries in Polycrystalline Oxides Using Precession-Assisted 4D-STEM

Space charge layers (SCLs) at grain boundaries play a crucial role in modulating local electric fields and influencing the functional properties of materials, such as oxygen vacancy migration and ionic conductivity in oxide ceramics. However, the direct experimental analysis of such localized electric fields and the corresponding charge distribution remains challenging. Conventional center-of-mass (CoM) analysis in scanning transmission electron microscopy differential phase contrast (STEM-DPC) is strongly affected by orientation-dependent contrast and dynamical scattering. Here, we demonstrate that combining electron beam precession with advanced post-processing, employing iterative edge detection via a Sobel filter and singular value decomposition (SVD), enables reliable and accurate, unbiased diffraction shift measurements with minimal crystallographic artefacts. The new method accurately refines the central disk position in nanobeam electron diffraction (NBED) patterns and thus significantly improves the extraction of the local electric field and corresponding charge distribution. Comparative analysis with conventional CoM methods shows superior accuracy and robustness for random grain boundaries in BaTiO3 and SrTiO3 as exemplary case studies. The experimental work is complemented by atomistic simulations to separate the electric field of the SCL from the mean inner potential difference of the grain boundary and the elemental segregation around the grain boundary. The in-depth analysis shows that our approach enables high-fidelity mapping of electromagnetic fields and their charge distribution in complex polycrystalline specimens, laying the groundwork for improved quantitative analysis using STEM-DPC.

cond-mat.mtrl-sci↗

arXiv2026

Room-temperature magnetic p-n junctions for charge-and-spin diodes

Non-magnetic p-n junctions have been fundamental components in the silicon era, serving as the backbone for nearly all Si-based semiconductor devices, including transistors. To tackle challenges such as scaling limitations, excessive latency, and high-power consumption in Si-based electronics, we develop magnetic p-n junctions composed of a p-type amorphous magnetic semiconductor (p-AMS) and n-type Si. These charge-and-spin junctions exhibit typical diode characteristics for charge current, along with distinctive spin diode features. By manipulating spin-polarized space charges, we observed a giant magnetic enhancement of approximately 24.36% at a breakdown current of 5 mA, and an impressive 29-fold increase in magnetic moments for p-AMS. The observed spin behavior is attributed to space charge effects or carrier depletion in the p-AMS with extended hole states.

cond-mat.mtrl-sci↗

arXiv2024

Simultaneous mapping of magnetic and atomic structure for direct visualization of nanoscale magnetoelastic coupling

Achieving a correlative measurement of both magnetic and atomic structures at the nanoscale is imperative to understand the fundamental magnetism of matters and for fostering the development of new magnetic nanomaterials. Conventional microscopy methods fall short in providing the two information simultaneously. Here, we develop a new approach to simultaneously map the magnetic field and atomic structure at the nanoscale using Lorentz 4-dimensional scanning transmission electron microscopy (Ltz-4D-STEM). This method enables precise measurement of the characteristic atomic and magnetic structures across an extensive field of view, a critical aspect for investigating real-world ferromagnetic materials. It offers a comprehensive visualization and statistical evaluation of the different structural information at a pixel-by-pixel correlation. The new method allows to directly visualize the magnetoelastic coupling and the resulting complex magnetization arrangement as well as the competition between magnetoelastic and magnetostatic energy. This approach opens new avenues for in-depth studying the structure-property correlation of nanoscale magnetic materials.

cond-mat.mtrl-sci↗

arXiv2020

Quantifying the Performance of a Hybrid Pixel Detector with GaAs:Cr Sensor for Transmission Electron Microscopy

Hybrid pixel detectors (HPDs) have been shown to be highly effective for diffraction-based and time-resolved studies in transmission electron microscopy, but their performance is limited by the fact that high-energy electrons scatter over long distances in their thick Si sensors. An advantage of HPDs compared to monolithic active pixel sensors (MAPS) is that their sensor does not need to be fabricated from Si. We have compared the performance of the Medipix3 HPD with a Si sensor and with a GaAs:Cr sensor using primary electrons in the energy range of 60 - 300keV. We describe the measurement and calculation of the detectors' modulation transfer function (MTF) and detective quantum efficiency (DQE), which show that the performance of the GaAs:Cr device is markedly superior to that of the Si device for high-energy electrons.

physics.ins-det↗

arXiv2020

Role of intermediate 4$f$ states in tuning the band structure of high entropy oxides

High entropy oxides (HEOs) are single phase solid solutions consisting of 5 or more cations in approximately equiatomic proportions. In this study, we show reversible control of optical properties in a rare-earth (RE) based HEO-(Ce$_{0.2}$La$_{0.2}$Pr$_{0.2}$Sm$_{0.2}$Y$_{0.2}$)O$_{2-\delta}$ and subsequently utilize a combination of spectroscopic techniques to derive the features of the electronic band structure underpinning the observed optical phenomena. Heat treatment of the HEO under vacuum atmosphere followed by reheat-treatment in air results in a reversible change of the band gap energy, from 1.9 eV to 2.5 eV. The finding is consistent with the reversible changes in the oxidation state and related $f$-orbital occupancy of Pr. However, no pertinent changes in the phase composition or crystal structure is observed upon the vacuum heat treatment. Further annealing of this HEO under H$_2$ atmosphere, followed by reheat-treatment in air, results in even larger but still reversible change of the band gap energy from 1.9 eV to 3.2 eV. This is accompanied by a disorder-order type crystal structure transition and changes in the O 2$p$-RE 5$d$ hybridization evidenced from X-ray absorption near edge spectra (XANES). The O $K$ and RE ${M_{4,5}}$/$L_{3}$ XANES indicate that the presence of Ce and Pr (in 3+/4+) state leads to the formation of intermediate 4$f$ energy levels between the O 2$p$ and RE 5$d$ gap in HEO. It is concluded that heat treatment under reducing/oxidizing atmospheres affects these intermediate levels, thus, offering the possibility to tune the band gap energy in HEO.

cond-mat.mtrl-sci↗