Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation

Aaquib Shamim; Scott D. Liles; Joe Hillier; Jonathan Y. Huang; Isaac Vorreiter; Pratik Chowdhury; Chris C. Escott; Fay E. Hudson; Wee Han Lim; Kok Wai Chan; Rajib Rahman; Andrew S. Dzurak; Alexander R. Hamilton

arXiv · 2603.02746

Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation

Aaquib Shamim·Scott D. Liles·Joe Hillier·Jonathan Y. Huang·Isaac Vorreiter·Pratik Chowdhury·Chris C. Escott·Fay E. Hudson·Wee Han Lim·Kok Wai Chan·Rajib Rahman·Andrew S. Dzurak·Alexander R. Hamilton

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Abstract

Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and electrical spin control. However, spin-orbit coupling not only enables multiple spin-control mechanisms, but also exposes the qubits to charge noise. In this work, we perform a systematic study of the spin control mechanism in a planar silicon hole quantum dot. We use g-matrix formalism to discern contributions from the various spin driving mechanisms and identify regions where spins are less sensitive to charge noise. By mapping out the dependence of the Rabi frequency on the magnetic field orientation, we observe the largest Rabi frequency in the in-plane direction and the smallest Rabi frequency close to the out-of-plane direction. These results enhance the understanding of how different mechanisms contribute to spin driving within an industrially relevant architecture and aid in establishing the operating conditions for the rapid and coherent manipulation of hole qubits.

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Aaquib Shamim, Scott D. Liles, Joe Hillier, Jonathan Y. Huang, Isaac Vorreiter, Pratik Chowdhury, Chris C. Escott, Fay E. Hudson, Wee Han Lim, Kok Wai Chan, Rajib Rahman, Andrew S. Dzurak, Alexander R. Hamilton. 2026-03-03. Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation. https://arxiv.org/abs/2603.02746

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