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arXiv · 2603.06021

Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition

Yungyeong Park·Yosep Park·Hyeonseok Choi·Subeen Lim·Dongwook Kim·Yeonghun Lee
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Abstract

Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge transport. This paper presents a device modeling based on the tight-binding model and the nonequilibrium Green's function formalism to simulate the current-voltage characteristics of the TIFETs. We then use the device simulator to demonstrate the effect of channel length on device performance. The device modeling will not only enable a direct estimation of TIFET performance but also shed light on the nontraditional switching operation via the topological phase transition.

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Yungyeong Park, Yosep Park, Hyeonseok Choi, Subeen Lim, Dongwook Kim, Yeonghun Lee. 2026-03-06. Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition. https://doi.org/10.1109/ted.2024.3427091

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