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arXiv · 2603.16144

High-Bandwidth 940 nm VCSEL with Zn-diffusion for Optical Communications

Fu-He Hsiao·Yu-Jie Lin·Chia-Jung Tsai·Chia-Chen Li·Yun-Han Chang·Chih-Ting Chang·Jr-Hau He·Chun-Liang Lin·Yu-Heng Hong·Hao-Chung Kuo
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Abstract

We present a systematic design methodology, combining simulation and experimental validation, for high-speed 940 nm vertical-cavity surface-emitting lasers (VCSELs). A comprehensive simulation study was conducted to optimize the device structure, focusing on the number of oxide layers and the aperture size, which predicted a maximum modulation bandwidth of over 35 GHz. To validate this approach, an optimized device with a 4-{\mu}m double-oxide aperture was fabricated and characterized. Crucially, during the fabrication process, a Zn-diffused region was incorporated to further enhance device performance. The experimental results demonstrate a modulation bandwidth of 34 GHz and successful 100 Gbit/s PAM-4 data transmission. The excellent agreement between the simulated and measured performance validates the effectiveness of our design meth-odology, providing a reliable framework for developing next-generation optical inter-connects.

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Fu-He Hsiao, Yu-Jie Lin, Chia-Jung Tsai, Chia-Chen Li, Yun-Han Chang, Chih-Ting Chang, Jr-Hau He, Chun-Liang Lin, Yu-Heng Hong, Hao-Chung Kuo. 2026-03-17. High-Bandwidth 940 nm VCSEL with Zn-diffusion for Optical Communications. https://arxiv.org/abs/2603.16144

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