arXiv subjects

Chun-Liang Lin

Publications and source records attributed to Chun-Liang Lin.

9 recordsLinked to original sources

arXiv2026

Phonon-driven Floquet engineering for electronic states

Controlling material excitations offers access to novel fundamental and technological properties. The paradigm of Floquet engineering, the manipulation of the electronic structure using a coherent and time-periodic driving source, has attracted significant attention. While most realizations rely on strong optical fields, coherent phonons provide an alternative route to realizing Floquet-Bloch states and are expected to enable substantially longer-lived Floquet-Bloch states. We show that laser-excited coherent phonons drive Floquet-Bloch states. Using time-resolved multiphoton photoemission combined with quantum beat spectroscopy on graphene-covered Ir(111), we track the coherent electronic dynamics of the image-potential states dressed by coherent phonons. The beat signal indicates the presence of sideband structure with the coherent-phonon frequency as its fundamental period, consistent with Floquet theory. Furthermore, an independent oscillation in intensity at the same frequency was observed, confirming excitation of the coherent phonon mode. Compared with conventional light-driven Floquet-Bloch states, the observed phonon-driven Floquet-Bloch states persist for one to two orders of magnitude longer. These results establish coherent phonons as a material-driven route to Floquet engineering and demonstrate the long-lived dressing of electronic states beyond the optical excitation window.

cond-mat.mtrl-sci↗

arXiv2026

Multiple Softening Q-vectors Driving a Cascade of CDW Phases in $\mathrm{1T-VSe}_{2}$

Charge density wave (CDW) formation in two-dimensional materials is governed by complex competing lattice instabilities that remain incompletely understood. Here, we investigate the structural evolution of monolayer $\mathrm{1T-VSe}_{2}$ using first-principles electronic and phonon calculations. The pristine phase exhibits several imaginary-frequency phonon modes associated with dominant instability wave vectors $\mathrm{Q}_{CDW}$, which generate the first-generation CDW phases. Subsequent phonon analyses reveal that several of these intermediate structures remain dynamically unstable and undergo further symmetry-lowering distortions into larger superstructures. Through iterative phonon-driven relaxations, we identify multiple transformation pathways that converge toward the same low-energy $2\sqrt{3}\times4$ CDW configuration. Although these pathways originate from distinct intermediate CDW states, they ultimately reach nearly degenerate energetically stable phases, demonstrating that different phonon-driven routes can lead to the same ground-state configuration. The results establish a unified phonon-driven cascade mechanism for hierarchical CDW formation in monolayer $\mathrm{1T-VSe}_{2}$ and provide a systematic framework for understanding competing ordered phases in low-dimensional quantum materials.

cond-mat.mtrl-sci↗

arXiv2026

High-Bandwidth 940 nm VCSEL with Zn-diffusion for Optical Communications

We present a systematic design methodology, combining simulation and experimental validation, for high-speed 940 nm vertical-cavity surface-emitting lasers (VCSELs). A comprehensive simulation study was conducted to optimize the device structure, focusing on the number of oxide layers and the aperture size, which predicted a maximum modulation bandwidth of over 35 GHz. To validate this approach, an optimized device with a 4-{\mu}m double-oxide aperture was fabricated and characterized. Crucially, during the fabrication process, a Zn-diffused region was incorporated to further enhance device performance. The experimental results demonstrate a modulation bandwidth of 34 GHz and successful 100 Gbit/s PAM-4 data transmission. The excellent agreement between the simulated and measured performance validates the effectiveness of our design meth-odology, providing a reliable framework for developing next-generation optical inter-connects.

physics.optics↗

arXiv2024

Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors

In semiconducting monolayer transition metal dichalcogenides (ML-TMDs), broken inversion symmetry and strong spin-orbit coupling result in spin-valley lock-in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real-space structural transformation. Here, we report magnetic field (B)-induced giant electric hysteretic responses to back-gate voltages in ML-MoS2 field-effect transistors (FETs) on SiO2/Si at temperatures < 20 K. The observed hysteresis increases with |B| up to 12 T and is tunable by varying the temperature. Raman spectroscopic and scanning tunneling microscopic studies reveal significant lattice expansion with increasing |B| at 4.2 K, and this lattice expansion becomes asymmetric in ML-MoS2 FETs on rigid SiO2/Si substrates, leading to out-of-plane mirror symmetry breaking and the emergence of a tunable out-of-plane ferroelectric-like polar order. This broken symmetry-induced polarization in ML-MoS2 shows typical ferroelectric butterfly hysteresis in piezo-response force microscopy, adding ML-MoS2 to the single-layer material family that exhibit out-of-plane polar order-induced ferroelectricity, which is promising for such technological applications as cryo-temperature ultracompact non-volatile memories, memtransistors, and ultrasensitive magnetic field sensors. Moreover, the polar effect induced by asymmetric lattice expansion may be further generalized to other ML-TMDs and achieved by nanoscale strain engineering of the substrate without magnetic fields.

cond-mat.str-el↗

arXiv2023

Anomalous vortex shape in a frustrated superconductor hosting chiral multicomponent order parameters

Multicomponent chiral superconductors can host spatially separated superconducting components within a single Abrikosov vortex, leading to unconventional, anisotropic vortex shapes forbidden in conventional single-component superconductors. Here, using spectroscopic scanning tunneling microscopy at 0.3 K, we investigate the mixed state of the spinel superconductor LiTi2O4 (Tc = 13 K). In the low-field regime, where vortex-vortex interactions are minimized and the intrinsic single-vortex shape is preserved, reasonably isolated triangular Abrikosov vortices are directly visualized with high statistical significance. Remarkably, the vortex orientation is locked to crystallographic domains rather than the magnetic-field direction, revealing a hidden chirality selectivity embedded in the zero-field electronic state.

cond-mat.supr-con↗

arXiv2023

Tomography Scan of Charge Density Wave in NbSe2

Charge density wave (CDW) resulted from a small distortion in the lattice is able to create new orders beyond the original lattice. In 2H-NbSe2, one of the layered transition metal dichalcogenides (TMD), the 3x3 charge order appears in two-dimensional (2D) layers. Although CDW is usually described by a sine wave, the spatial distribution within a 2D layer has never been systematically visualized. Here by using scanning tunneling microscopy (STM) and density functional theory (DFT), we have monitored the evolution of 3x3 CDW along c-axis and realized a nearly tomography scan of CDW of the topmost layer. The results show that the strength of 3x3 charge order varies while increasing the tunneling current. The 3x3 charge order is relatively strong at the outermost Se level and decreases while probing in between Se and Nb levels. Interestingly, the 3x3 charge order gets strong again as reaching Nb level but along with a phase shift. We further calculated the orbital charge distributions and found that both CDW intensity modulation and phase shift are strongly correlated with the distribution of Se p orbitals and Nb d orbitals.

physics.app-ph↗

arXiv2022

Revealing the Charge Density Wave caused by Peierls instability in two-dimensional NbSe$_{2}$

The formation of a charge density wave (CDW) in two-dimensional (2D) materials caused by Peierls instability is a controversial topic. This study investigates the extensively debated role of Fermi surface nesting in causing the CDW state in 2H-NbSe$_{2}$ materials. Four NbSe$_{2}$ structures (i.e., normal, stripe, filled, and hollow structures) are identified on the basis of the characteristics in scanning tunneling microscopy images and first-principles simulations. The calculations reveal that the filled phase corresponds to Peierls' description; that is, it exhibits fully opened gaps at the CDW Brillouin zone boundary, resulting in a drop at the Fermi level in the density of states and the scanning tunneling spectroscopy spectra. The electronic susceptibility and phonon instability in the normal phase indicate that the Fermi surface nesting is triggered by two nesting vectors, whereas the involvement of only one nesting vector leads to the stripe phase. This comprehensive study demonstrates that the filled phase of NbSe$_{2}$ can be categorized as a Peierls-instability-induced CDW in 2D systems.

cond-mat.mtrl-sci↗

arXiv2022

Homoepitaxy of rhombohedral-stacked MoS2 with room temperature switchable ferroelectricity

The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural 3R crystals is difficult due to lack of co-existing 3R stacking domains. Here, we present that MoS2 homoepitaxial patterns with 3R polytypic domains can manifest switchable ferroelectricity at room-temperature. Based on the diffusion limited aggregation theory, such MoS2 patterns are formed under the low Mo chemical potential and low temperature with respect to common chemical vapor deposition synthesis. The alternation of 3R polytypes in the MoS2 homoepitaxial patterns, observed by scanning transmission electron microscopy, accounts for ferroelectricity switching. The MoS2 field-effect transistors with 3R polytypic domains exhibit a repeatable counterclockwise hysteresis with gate voltage sweeping, an indication of ferroelectricity switching, and the memory window exceeds those measured for compact-shaped 3R bilayer devices. This work provides a direct growth concept for layered 3R-based ferroelectric memory.

cond-mat.mtrl-sci↗

arXiv2018

Mechanically tunable spontaneous vertical charge redistribution in few-layer WTe2

Broken symmetry is the essence of exotic properties in condensed matters. Tungsten ditelluride, WTe$_2$, exceptionally takes a non-centrosymmetric crystal structure in the family of transition metal dichalcogenides, and exhibits novel properties$^{1-4}$, such as the nonsaturating magnetoresistance$^1$ and ferroelectric-like behavior$^4$. Herein, using the first-principles calculation, we show that unique layer stacking in WTe$_2$ generates surface dipoles with different strengths on the top and bottom surfaces in few-layer WTe$_2$. This leads to a layer-dependence for electron/hole carrier ratio and the carrier compensation responsible for the unusual magnetoresistance. The surface dipoles are tunable and switchable using the interlayer shear displacement. This could explain the ferroelectric-like behavior recently observed in atomically thin WTe$_2$ films$^4$. In addition, we reveal that exfoliation of the surface layer flips the out-of-plane spin textures. The presented results will aid in the deeper understanding, manipulation, and further exploration of the physical properties of WTe$_2$ and related atom-layered materials, for applications in electronics and spintronic devices.

cond-mat.mtrl-sci↗