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arXiv · 2603.24762

Chalcogen Doping Effect on the Insulator-to-Metal Transition in GdPS

Gokul Acharya·Rabindra Basnet·Santosh Karki Chhetri·Dinesh Upreti·M. M. Sharma·Jian Wang·David Graf·Jin Hu
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Abstract

Topological semimetals offer a rich platform for exploring massless fermion physics and realizing exotic properties with potential technological applications. GdPS, a magnetic semiconductor derived from the nodal-line semimetal ZrSiS family, exhibits a field-induced insulator-to-metal transition driven by exchange splitting. This transition is accompanied by an unusual, isotropic, and gigantic negative magnetoresistance, attributed to negligible magnetic anisotropy resulting from the weak spin-orbit coupling of half-filled Gd3+ 4f orbitals and light S atoms. In this work, we investigate Se substitution, which is expected to enhance spin-orbit coupling. Indeed, we observe slightly increased magnetic anisotropy in magnetotransport. Moreover, Se substitution suppresses the field-induced insulator-to-metal transition, likely due to an enlarged band gap that demands a higher exchange splitting to close. These findings provide deeper insights into the interplay between spin-orbit coupling, magnetic anisotropy, and transport behavior in GdPS, offering guidance for future materials design for desired functionalities.

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Gokul Acharya, Rabindra Basnet, Santosh Karki Chhetri, Dinesh Upreti, M. M. Sharma, Jian Wang, David Graf, Jin Hu. 2026-03-25. Chalcogen Doping Effect on the Insulator-to-Metal Transition in GdPS. https://doi.org/10.1016/j.jallcom.2026.187404

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