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arXiv · 2604.15635

Inductance Meets Memory in the Quantum Magnet Mn3Si2Te6

Tristan R. Cao·Gabriel Schebel·Arabella Quane·Hengdi Zhao·Yu Zhang·Feng Ye·Longji Cui·Gang Cao
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Abstract

Orbital degrees of freedom offer a largely untapped route to emergent dynamical phenomena in correlated quantum materials. However, it remains unclear whether collective orbital states can intrinsically generate both reactive and memory functionalities in a bulk system. Here we show that in the ferrimagnet Mn3Si2Te6, nonequilibrium reconfiguration of chiral orbital currents produces both emergent inductance and nonvolatile memristance as intrinsic properties of a single crystal. At low frequency and under a magnetic field along the c axis, coherent orbital-current domains generate robust clockwise inductive I-V loops. At higher frequency and low field, current-driven first-order reconfiguration leads to incomplete reversal and metastable trapping, producing an intrinsic electromotive force and a finite remanent voltage at zero current. These results establish orbital currents as a class of quantum state variables that encode both reactive and memory functionalities, opening routes toward intrinsically reconfigurable and energy-efficient electronic systems.

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Tristan R. Cao, Gabriel Schebel, Arabella Quane, Hengdi Zhao, Yu Zhang, Feng Ye, Longji Cui, Gang Cao. 2026-04-17. Inductance Meets Memory in the Quantum Magnet Mn3Si2Te6. https://doi.org/10.1038/s42005-026-02622-7

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