Stability of Charge Collection Efficiency and Time Resolution in a Novel Ultra-fast Graphene-Optimized Silicon Carbide Detector Under X-ray Irradiation

Abstract

A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge collection performance and time resolution of beta-particles (90Sr) are reported. After 1 MGy irradiation, the detector maintains an ultralow leakage current of approximately 2.2e-10 A @ 300 V and the C-V characteristics are basically consistent with full depletion at 120V. The time resolution of the graphene-optimized silicon carbide detector is 58.0 ps. The time resolution is comparable to that of state-of-the-art 4H-SiC low-gain avalanche detectors (LGADs). The G/RE 4H-SiC PIN detector exhibits outstanding time resolution performance. Compared with the time resolution of the RE 4H-SiC PIN detector, the time resolution of the G/RE 4H-SiC PIN detector has decreased by 39.6%. This demonstrates the significance of the graphene electrode design. The graphene detector exhibits a charge collection efficiency (CCE) of 99.24% after X-ray irradiation, along with excellent stability. The graphene-optimized silicon carbide detector maintains good timing resolution: 58.0ps before and 64.0ps after X-ray irradiation. Experimental results indicate that the CCE and time resolution performance exhibit good stability before and after irradiation. These results demonstrate stable performance under extreme X-ray exposure, highlighting the detectors potential for radiation-hard applications in high-energy physics, space missions, and nuclear reactor monitoring.