arXiv · 2605.24221
A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
Abstract
In this paper we report a novel ohmic contact formation scheme for Extreme Bandgap (EBG) AlxGa1-xN (x>0.6) channel HEMTs with undoped barrier layers. Our approach consists of using a new low temperature (LT) pulsed metal-organic chemical vapor deposition (PMOCVD) doping scheme for the n++-GaN regrown contacts and an AlxGa1-xN digital alloy (DA) channel layer comprising short period super lattices (SPSL) of AlN and GaN. Pulsed growth and doping yield a sheet resistivity which is a factor of 3-5 lower than that of conventional doped n++-GaN layers grown under identical conditions. Moreover, the regrown n++-GaN layer has no hetero-barrier with the GaN layers of the AlxGa1-xN DA channel. These innovations led to MOCVD regrown linear ohmic contacts and a record-low contact resistance Rc ~6.5 {\Omega}-mm to the Al0.62Ga0.38N DA channel layer of a HEMT with AlN barrier layer.
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Tariq Jamil, Abdullah Al Mamun Mazumder, S M Tazbiul Hasan, Mafruda Rahman, Muhammad Ali, Ankit Malik, Kamal Hussain, Chandan Joishi, Mansura Sadek, James G. Fiorenza, Grigory Simin, Asif Khan. 2026-05-22. A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel. https://arxiv.org/abs/2605.24221
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