Contacts to Low-Dimensional Semiconductors: Physical Theory and Analytical Model

Jimmy Qin; H. -S. Philip Wong

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arXiv · 2606.16030

Contacts to Low-Dimensional Semiconductors: Physical Theory and Analytical Model

Jimmy Qin·H. -S. Philip Wong

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Abstract

Metal contacts to low-dimensional semiconductors are critical for nanoelectronics, yet a general physical description has remained elusive. We present an analytical model for metal-induced gap states (MIGS), revealing a universal scaling law governed by semiconductor dimensionality. Linking MIGS to transport observables, we provide a unified formulation of Schottky barrier height, transfer length, and contact resistance. Our model explains recent experiments on carbon nanotubes and 2D materials, clarifying the fundamental criteria for achieving scalable, low-resistance contacts.

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Jimmy Qin, H. -S. Philip Wong. 2026-06-14. Contacts to Low-Dimensional Semiconductors: Physical Theory and Analytical Model. https://arxiv.org/abs/2606.16030

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