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arXiv · 2606.18819

Solution gate control of shallow silicon vacancy charge states in diamond

Charlie Pattinson·Daniel J. McCloskey·Nikolai Dontschuk·Brett C. Johnson·Alexander A. Wood·David Simpson
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Abstract

Silicon-vacancy (SiV) centers in diamond combine near-infrared emission with solid-state robustness, but their performance hinges on isolating favorable defect charge states. We demonstrate static and dynamic control of ultra-shallow (<15 nm) SiV ensembles in type IIa diamond. By combining low-energy ion implantation with tailored oxygen and hydrogen terminations, we map regimes that maximise the fluorescent SiV- population over dark charge states. We then realize reversible SiV- to SiV0 conversion using aqueous electrolytic gating with sub-200 mV biases and low optical powers. Our results enable low-power electrical control of SiV ensembles for integrated quantum photonics and biologically compatible voltage imaging in the near-infrared.

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Charlie Pattinson, Daniel J. McCloskey, Nikolai Dontschuk, Brett C. Johnson, Alexander A. Wood, David Simpson. 2026-06-17. Solution gate control of shallow silicon vacancy charge states in diamond. https://arxiv.org/abs/2606.18819

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