Optimization of Epitaxial Mn4N Thin Films Grown by Sputtering for Spintronic Applications

Abstract

Ferrimagnetic Mn4N has recently emerged as a promising rare-earth-free platform for spintronic devices due to its low magnetization, high domain wall mobility, and strong anomalous Hall response. However, the realization of thin films with robust perpendicular magnetic anisotropy (PMA) and spin-orbit torque (SOT) functionality through scalable deposition techniques remains a significant challenge. In this work, we systematically investigate the growth of Mn4N thin films by reactive magnetron sputtering and determine the conditions required to achieve high-quality films suitable for SOT applications. We demonstrate that epitaxial, single-crystalline Mn4N films with strong PMA can be obtained on MgO(100), whereas films deposited on SrTiO3(100) exhibit a textured structure. The optimized films show square-shaped hysteresis loops with high remanence, large and tunable coercivity, and a pronounced anomalous Hall effect. By combining structural, magnetic, and magnetotransport characterization with density functional theory calculations, we reveal that epitaxial strain plays a key role in tuning magnetic anisotropy, while also showing that it is not the only contributing factor. In particular, our results emphasize the importance of interfacial effects in stabilizing PMA. Finally, we demonstrate efficient current-induced magnetization switching in Mn4N/Pt bilayers, confirming strong interfacial spin transparency. These findings establish sputtered Mn4N as a promising and versatile material platform for energy-efficient spin-orbitronic devices.