Electron Temperature and Electron-Electron Scattering Length in GaAs/AlGaAs Using Mesoscopic Multiparallel Aperture Geometries

Arati Thapa; Rishav Khatiwada; Prakash Sharma; Jean J. Heremans; Adbhut Gupta; Kirk W. Baldwin; Loren N. Pfeiffer; Mansour Shayegan

arXiv · 2608.06708

Electron Temperature and Electron-Electron Scattering Length in GaAs/AlGaAs Using Mesoscopic Multiparallel Aperture Geometries

Arati Thapa·Rishav Khatiwada·Prakash Sharma·Jean J. Heremans·Adbhut Gupta·Kirk W. Baldwin·Loren N. Pfeiffer·Mansour Shayegan

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Abstract

Quantifying electron temperatures and electron-electron scattering lengths is essential for understanding electron transport regimes in two-dimensional systems. To that end, this work experimentally investigates low-temperature ballistic transport using semiclassical cyclotron orbits in a multiparallel aperture geometry. The mesoscopic geometry is fabricated on a GaAs/AlGaAs heterostructure of very high electron mobility. The amplitudes of maxima in magnetoresistance due to ballistic transport are observed to decay exponentially with temperature, allowing determination of the electron-electron scattering length from the data. A quantitative relation between electron temperature and an applied dc bias heating current is established by comparing magnetoresistance peak amplitudes measured as a function of temperature and dc bias, reflecting bias-induced Joule heating. In addition, the resistance measured near zero magnetic field decreases with increasing temperature, providing signatures of superballistic conductance.

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Arati Thapa, Rishav Khatiwada, Prakash Sharma, Jean J. Heremans, Adbhut Gupta, Kirk W. Baldwin, Loren N. Pfeiffer, Mansour Shayegan. 2026-08-07. Electron Temperature and Electron-Electron Scattering Length in GaAs/AlGaAs Using Mesoscopic Multiparallel Aperture Geometries. https://arxiv.org/abs/2608.06708

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