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arXiv · 2608.11952

Electronic structure, band offset, and interface electron population of the LaInO$_3$/BaSnO$_3$ system

G. Hoffmann·A. A. Riaz·C. Kalha·A. Gloskovskii·C. Schlueter·O. Brandt·W. Aggoune·C. Draxl·O. Bierwagen·A. Regoutz
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Abstract

Perovskite oxides and their heterostructures exhibit a wide range of functional properties. Among these materials, BaSnO$_3$/LaInO$_3$ heterostructures form high-mobility two-dimensional electron gases (2DEGs) at their interfaces. In particular, room-temperature electron mobilities exceeding 100~cm$^2$/Vs were enabled by recent advances in thin-film growth. This work presents a combined experimental and theoretical study of the electronic structure of BaSnO$_3$, LaInO$_3$, and BaSnO$_3$/LaInO$_3$ heterostructures with varying LaInO$_3$ overlayer thicknesses. Soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) measurements are combined with densities of states (DOS) derived from hybrid density functional theory (DFT) calculations. The analysis of core, semi-core, and valence states allows to arrive at a comprehensive understanding of the chemical bonding and electronic structure in the parent oxides as well as the formed heterostructures. For the BaSnO$_3$/LaInO$_3$ heterostructure, the band offset and population of 2DEG states at the interface is directly probed using HAXPES.

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G. Hoffmann, A. A. Riaz, C. Kalha, A. Gloskovskii, C. Schlueter, O. Brandt, W. Aggoune, C. Draxl, O. Bierwagen, A. Regoutz. 2026-08-12. Electronic structure, band offset, and interface electron population of the LaInO$_3$/BaSnO$_3$ system. https://arxiv.org/abs/2608.11952

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