arXiv subjects

O. Brandt

Publications and source records attributed to O. Brandt.

At least 19 recordsLinked to original sources

arXiv2026

Electronic structure, band offset, and interface electron population of the LaInO$_3$/BaSnO$_3$ system

Perovskite oxides and their heterostructures exhibit a wide range of functional properties. Among these materials, BaSnO$_3$/LaInO$_3$ heterostructures form high-mobility two-dimensional electron gases (2DEGs) at their interfaces. In particular, room-temperature electron mobilities exceeding 100~cm$^2$/Vs were enabled by recent advances in thin-film growth. This work presents a combined experimental and theoretical study of the electronic structure of BaSnO$_3$, LaInO$_3$, and BaSnO$_3$/LaInO$_3$ heterostructures with varying LaInO$_3$ overlayer thicknesses. Soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) measurements are combined with densities of states (DOS) derived from hybrid density functional theory (DFT) calculations. The analysis of core, semi-core, and valence states allows to arrive at a comprehensive understanding of the chemical bonding and electronic structure in the parent oxides as well as the formed heterostructures. For the BaSnO$_3$/LaInO$_3$ heterostructure, the band offset and population of 2DEG states at the interface is directly probed using HAXPES.

cond-mat.mtrl-sci↗

arXiv2025

Summary Report of the Physics Beyond Colliders Study at CERN

The Physics Beyond Collider (PBC) Study Group was initially mandated by the CERN Management to prepare the previous European Particle Physics Strategy Update for CERN projects other than the high-energy frontier colliders. The main findings were summarized in an PBC Summary Report submitted to the Strategy Update. Following the Update process, the PBC Study Group was confirmed on a permanent basis with an updated mandate taking into account the strategy recommendations. The Study Group is now in charge of supporting the proponents of new ideas to address the technical issues and physics motivation of the projects ahead of their review by the CERN Scientific Committees and decision by the Management. The present document updates the previous PBC summary report to inform the new ongoing European Particle Physics Strategy Update process, taking into account the evolution of the CERN and worldwide landscapes and the new projects under consideration within the Study Group.

hep-ex↗

arXiv2024

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approaches to minimize the incubation time and thus facilitate significantly higher growth temperatures (up to 875$^{\circ}$C). We achieve this by: (i) using III/V flux ratios larger than one to compensate for Ga desorption, (ii) introducing a two-step growth procedure, and (iii) using an AlN buffer layer to favor GaN nucleation. The GaN nanowire ensembles grown at so far unexplored substrate temperatures exhibit excitonic transitions with sub-meV linewidths and the low-temperature photoluminescence spectra are comparable to those of state-of-the-art free-standing GaN layers grown by hydride vapor phase epitaxy.

cond-mat.mtrl-sci↗

arXiv2021

Comparison of $pp$ and $p \bar{p}$ differential elastic cross sections and observation of the exchange of a colorless $C$-odd gluonic compound

We describe an analysis comparing the $p\bar{p}$ elastic cross section as measured by the D0 Collaboration at a center-of-mass energy of 1.96 TeV to that in $pp$ collisions as measured by the TOTEM Collaboration at 2.76, 7, 8, and 13 TeV using a model-independent approach. The TOTEM cross sections extrapolated to a center-of-mass energy of $\sqrt{s} =$ 1.96 TeV are compared with the D0 measurement in the region of the diffractive minimum and the second maximum of the $pp$ cross section. The two data sets disagree at the 3.4$σ$ level and thus provide evidence for the $t$-channel exchange of a colorless, $C$-odd gluonic compound, also known as the odderon. We combine these results with a TOTEM analysis of the same $C$-odd exchange based on the total cross section and the ratio of the real to imaginary parts of the forward elastic scattering amplitude in $pp$ scattering. The combined significance of these results is larger than 5$σ$ and is interpreted as the first observation of the exchange of a colorless, $C$-odd gluonic compound.

hep-ex↗

arXiv2021

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{x}}$: effects of surface electric fields

GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times approaching those measured for state-of-the-art bulk GaN. However, the decay time is not correlated with the growth temperature, but rather with the nanowire diameter. The inverse dependence of the decay time on diameter suggests that the nonradiative process in GaN nanowires is not controlled by the defect density, but by the field ionization of excitons in the radial electric field caused by surface band bending. We propose a unified mechanism accounting for nonradiative recombination in GaN nanowires of arbitrary diameter.

physics.app-ph↗

arXiv2020

External control of GaN band bending using phosphonate self-assembled monolayers

We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band bending, two types of phosphonic acids, n-octylphosphonic acid (OPA) and 1H,1H,2H,2H-perfluorooctanephosphonic acid (PFOPA), are grafted on oxidized GaN$(0001)$ and GaN$(1\bar{1}00)$ layers as well as on GaN nanowires. The resulting hybrid inorganic/organic heterostructures are investigated by X-ray photoemission and photoluminescence spectroscopy. The GaN work function is changed significantly by the grafting of phosphonic acids, evidencing the formation of dense self-assembled monolayers. Regardless of the GaN surface orientation, both types of phosphonic acids significantly impact the GaN surface band bending. A dependence on the acids' electronegativity is, however, only observed for the oxidized GaN$(1\bar{1}00)$ surface, indicating a relatively low density of surface states and a favorable band alignment between the surface oxide and acids' electronic states. Regarding the optical properties, the covalent bonding of PFOPA and OPA on oxidized GaN layers and nanowires significantly affect their external quantum efficiency, especially in the nanowire case due to the large surface-to-volume ratio. The variation in the external quantum efficiency is related to the modication of both the internal electric fields and surface states. These results demonstrate the potential of phosphonate chemistry for the surface functionalization of GaN, which could be exploited for selective sensing applications.

physics.app-ph↗

arXiv2020

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in high-resolution X-ray diffraction profiles reveal the presence of a homogeneous tensile strain in the out-of-plane direction. This strain is inversely proportional to the average nanowire radius and results from the surface stress acting on the nanowire sidewalls. The superposition of strain from nanowires with different radii in the same ensemble results in a broadening of the Bragg peaks that mimics an inhomogeneous strain on a macroscopic scale. The nanowire ensembles show a small blueshift of the bound-exciton transitions in photoluminescence spectra, reflecting the existence of a compensating in-plane compressive strain, as further supported by grazing incidence x-ray diffraction measurements carried out at a synchrotron. By combining X-ray diffraction and photoluminescence spectroscopy, the surface stress components $f_{x}$ and $f_{z}$ of the air-exposed GaN$\{1\bar100\}$ planes that constitute the nanowire sidewalls are determined experimentally to be 2.25 and $-0.7$~N/m, respectively.

cond-mat.mtrl-sci↗

arXiv2019

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN quantum disks embedded in long (Al,Ga)N nanowire segments essential for efficient light extraction. These quantum disks are found to exhibit intense emission at unexpectedly high energies, namely, significantly above the GaN bandgap, and almost independent of the disk thickness. An in-depth investigation of the actual structure and composition of the nanowires reveals a spontaneously formed Al gradient both along and across the nanowire, resulting in a complex core/shell structure with an Al deficient core and an Al rich shell with continuously varying Al content along the entire length of the (Al,Ga)N segment. This compositional change along the nanowire growth axis induces a polarization doping of the shell that results in a degenerate electron gas in the disk, thus screening the built-in electric fields. The high carrier density not only results in the unexpectedly high transition energies, but also in radiative lifetimes depending only weakly on temperature, leading to a comparatively high internal quantum efficiency of the GaN quantum disks up to room temperature.

cond-mat.mes-hall↗

arXiv2017

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C. This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially homogeneous green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.

cond-mat.mtrl-sci↗

arXiv2017

Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency

We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN$(000\bar{1})$ nanowires using photoluminescence spectroscopy under both continuous-wave and pulsed excitation. The photoluminescence intensities of these two samples quench only slightly between 10 and 300 K, which is commonly taken as evidence for high internal quantum efficiencies. However, a side-by-side comparison shows that the absolute intensity of the Ga-polar quantum wells is two orders of magnitude higher than that of the N-polar quantum disks. A similar difference is observed for the initial decay time of photoluminescence transients obtained by time-resolved measurements, indicating the presence of a highly efficient nonradiative decay channel for the quantum disks. In apparent contradiction to this conjecture, the decay of both samples is observed to slow down dramatically after the initial rapid decay. Independent of temperature, the transients approach a power law for longer decay times, reflecting that recombination occurs between individual electrons and holes with varying spatial separation. Employing a coupled system of stochastic integro-differential equations taking into account both radiative and nonradiative Shockley-Read-Hall recombination of spatially separate electrons and holes as well as their diffusion, we obtain simulated transients matching the experimentally obtained ones. The results reveal that even dominant nonradiative recombination conserves the power law decay for (In,Ga)N/GaN{0001} quantum wells and disks.

cond-mat.mes-hall↗

arXiv2017

In/GaN(0001)-$\boldsymbol{{\mathsf{\left(\!\sqrt{3}\times\!\sqrt{3}\right)\!R30^{\circ}}}}$ adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(\sqrt{3}\times\!\sqrt{3})\text{R}30^{\circ}$ surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 monolayer of In on the GaN surface and, under suitable conditions, can be embedded into GaN to form an In$_{0.33}$Ga$_{0.67}$N quantum sheet whose width is naturally limited to a single monolayer. Periodically inserting these quantum sheets, we synthesize (In,Ga)N/GaN short-period superlattices with abrupt interfaces and high periodicity as demonstrated by x-ray diffractometry and scanning transmission electron microscopy. The embedded quantum sheets are found to consist of single monolayers with an In content of 0.25-0.29. For a barrier thickness of 6 monolayers, the superlattice gives rise to a photoluminescence band at 3.16 eV, close to the theoretically predicted values for these structures.

cond-mat.mtrl-sci↗

arXiv2016

Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001)

We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0001) surface in cathodoluminescence and electron-beam induced current maps. We consider exciton diffusion and recombination including finite recombination velocities both at the planar surface and at the dislocation. Formulating the reciprocity theorem for this general case enables us to provide a rigorous analytical solution of this diffusion-recombination problem. The results of the calculations are applied to an experimental example to determine both the exciton diffusion length and the recombination strength of threading dislocations in a free-standing GaN layer with a dislocation density of $6\times10^{5}$~cm$^{-2}$.

cond-mat.mtrl-sci↗

arXiv2016

Crystal-phase quantum dots in GaN quantum wires

We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy. These ultrathin nanowires, obtained by the thermal decomposition of spontaneously formed GaN nanowire ensembles, are tapered and have tip diameters down to 6 nm. With decreasing nanowire diameter, we observe a strong blue shift of the transition originating from the radiative decay of stacking fault-bound excitons. Moreover, the radiative lifetime of this transition in the ultrathin nanowires is independent of temperature up to 60 K and significantly longer than that of the corresponding transition in as-grown nanowires. These findings reveal a zero-dimensional character of the confined exciton state and thus demonstrate that I1 stacking faults in ultrathin nanowires act as genuine quantum dots.

cond-mat.mes-hall↗

arXiv2015

The Top Quark

On the twentieth anniversary of the observation of the top quark, we trace our understanding of this heaviest of all known particles from the prediction of its existence, through the searches and discovery, to the current knowledge of its production mechanisms and properties. We also discuss the central role of the top quark in the Standard Model and the windows that it opens for seeking new physics beyond the Standard Model.

hep-ex↗

arXiv2014

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence

We investigate the structural and optical properties of spontaneously formed GaN nanowires with different degrees of coalescence. This quantity is determined by an analysis of the cross-sectional area and perimeter of the nanowires obtained by plan-view scanning electron microscopy. X-ray diffraction experiments are used to measure the inhomogeneous strain in the nanowire ensembles as well as the orientational distribution of the nanowires. The comparison of the results obtained for GaN nanowire ensembles prepared on bare Si(111) and AlN buffered 6H-SiC(000-1) reveals that the main source of the inhomogeneous strain is the random distortions caused by the coalescence of adjacent nanowires. The magnitude of the strain inhomogeneity induced by nanowire coalescence is found not to be determined solely by the coalescence degree, but also by the mutual misorientation of the coalesced nanowires. The linewidth of the donor-bound exciton transition in photoluminescence spectra does not exhibit a monotonic increase with the coalescence degree. In contrast, the comparison of the root mean square strain with the linewidth of the donor-bound exciton transition reveals a clear correlation: the higher the strain inhomogeneity, the larger the linewidth.

cond-mat.mtrl-sci↗

arXiv2014

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency

We investigate the nature of excitons bound to I1 basal-plane stacking faults [(I1;X)] in GaN nanowire ensembles by continuous-wave and time-resolved photoluminescence spectroscopy. Based on the linear increase of the radiative lifetime of these excitons with temperature, they are demonstrated to exhibit a two-dimensional density of states, i. e., a basal-plane stacking fault acts as a quantum well. From the slope of the linear increase, we determine the oscillator strength of the (I1;X) and show that the value obtained reflects the presence of large internal electrostatic fields across the stacking fault. While the recombination of donor-bound and free excitons in the GaN nanowire ensemble is dominated by nonradiative phenonema already at 10 K, we observe that the (I1;X) recombines purely radiatively up to 60 K. This finding provides important insight into the nonradiative recombination processes in GaN nanowires. First, the radiative lifetime of about 6 ns measured at 60 K sets an upper limit for the surface recombination velocity of 450 cm/s considering the nanowires mean diameter of 105 nm. Second, the density of nonradiative centers responsible for the fast decay of donor-bound and free excitons cannot be higher than 2x10^16 cm^-3. As a consequence, the nonradiative decay of donor-bound excitons in these GaN nanowire ensembles has to occur indirectly via the free exciton state.

cond-mat.mes-hall↗

arXiv2012

Combination of the top-quark mass measurements from the Tevatron collider

The top quark is the heaviest known elementary particle, with a mass about 40 times larger than the mass of its isospin partner, the bottom quark. It decays almost 100% of the time to a $W$ boson and a bottom quark. Using top-antitop pairs at the Tevatron proton-antiproton collider, the CDF and {\dzero} collaborations have measured the top quark's mass in different final states for integrated luminosities of up to 5.8 fb$^{-1}$. This paper reports on a combination of these measurements that results in a more precise value of the mass than any individual decay channel can provide. It describes the treatment of the systematic uncertainties and their correlations. The mass value determined is $173.18 \pm 0.56 \thinspace ({\rm stat}) \pm 0.75 \thinspace ({\rm syst})$ GeV or $173.18 \pm 0.94$ GeV, which has a precision of $\pm 0.54%$, making this the most precise determination of the top quark mass.

hep-ex↗

arXiv2012

Measurement of the W boson helicity in top quark decays using 5.4 fb^-1 of ppbar collision data

We present a measurement of the helicity of the W boson produced in top quark decays using ttbar decays in the l+jets and dilepton final states selected from a sample of 5.4 fb^-1 of collisions recorded using the D0 detector at the Fermilab Tevatron ppbar collider. We measure the fractions of longitudinal and right-handed W bosons to be f_0 = 0.669 +- 0.102 [ +- 0.078 (stat.) +- 0.065 (syst.)] and f_+ = 0.023 +- 0.053 [+- 0.041 (stat.) +- 0.034 (syst.)], respectively. This result is consistent at the 98% level with the standard model. A measurement with f_0 fixed to the value from the standard model yields f_+ = 0.010 +- 0.037 [+- 0.022 (stat.) +- 0.030 (syst.) ].

hep-ex↗