Demonstration of a scalable all-solid-state refrigerator exploiting diffusion geometries and limiting interfacial conductances at temperatures below 1 kelvin

Abstract

Solid-state refrigerators using Normal-metal/Insulator/Superconductor (NIS) junctions have previously demonstrated excellent electron cooling but limited ability to cool phonons. The energy gap of the superconductor is used as an energy filter to allow higher than average energy electrons to preferentially tunnel from the normal-metal through the insulator into the superconductor where they travel as quasi-particles. Typically, the heat is moved and work is done to deposit hot quasi-particles into a normal-metal quasi-particle trap for rejection to the next refrigeration stage. Realizing that (1) the quasi-particles flow diffusively, driven by a concentration gradient in the electric field-free superconductor, and (2) that the undesirable backwards leaking of heat from the hot-side trap can be reduced by engineering the geometry and materials at the superconductor-to-trap interface, enhanced cooling can be achieved. Fabrication of the refrigerator was accomplished using a tungsten and titanium-tungsten alloy as the cold-side normal-metal, aluminum oxide as the insulator, aluminum as the superconductor, and gold as the trap, with the cold-side NIS portion being attached to the hot-side gold trap by bump bonding. The refrigerator consisted of 1121 junction pairs, each pair being an SINIS unit, all electrically connected in series. Using this we have measured the effective phonon temperature of a 3.9 mm x 3.9 mm x 0.65 mm silicon chip driven down to 70 mK from a bath temperature of 120 mK, and down to 174 mK from a 271 mK rejection temperature (a cooling of -97 mK). This is the first demonstration of the sub 1 K cooling of an entire silicon chip using NIS junctions.