Engineering of Dual Wavelength, Polarization Selective Metalenses in Silicon Carbide

Xiaoying Huang; Ziwei Yang; Konosuke Shimazaki; Kritsana Saego; Otto Cranwell Schaeper; Evan Williams; Dragomir Neshev; Hark Hoe Tan; Igor Aharonovicha; Mehran Kianinia

arXiv · 2608.17506

Engineering of Dual Wavelength, Polarization Selective Metalenses in Silicon Carbide

Xiaoying Huang·Ziwei Yang·Konosuke Shimazaki·Kritsana Saego·Otto Cranwell Schaeper·Evan Williams·Dragomir Neshev·Hark Hoe Tan·Igor Aharonovicha·Mehran Kianinia

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Abstract

Spin defects in silicon carbide (SiC) are promising candidates for integrated quantum photonics, offering long-lived spin states and near-infrared emission suitable for low-loss photonic integration and fibre-based quantum communication. However, light extraction from these defects remains challenging due the relatively high refractive index of SiC. Metalenses offer a compact approach to enhance light collection by engineering the wavefront directly at the material interface. Here, we design and fabricate monolithic metalenses from SiC bulk material that simultaneously operate at 860 and 1240 nm, matching with emission from the nitrogen vacancy and silicon vacancy colour centers. By independently engineering the phase response at both wavelengths, the metalens enables collection and polarization manipulation of the emitted light. We further employ the metalenses to demonstrate optically detected magnetic resonance of both defects simultaneously. These multifunctional metalenses provide a compact optical interface for scalable integrated SiC photonic devices.

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Xiaoying Huang, Ziwei Yang, Konosuke Shimazaki, Kritsana Saego, Otto Cranwell Schaeper, Evan Williams, Dragomir Neshev, Hark Hoe Tan, Igor Aharonovicha, Mehran Kianinia. 2026-08-18. Engineering of Dual Wavelength, Polarization Selective Metalenses in Silicon Carbide. https://arxiv.org/abs/2608.17506

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