arXiv subjects

Otto Cranwell Schaeper

Publications and source records attributed to Otto Cranwell Schaeper.

10 recordsLinked to original sources

arXiv2026

Channeling defect emission through topological Jackiw-Rebbi states in hBN

When two photonic structures of different topology are joined, an optical mode appears at their junction. Its existence depends only on this topological difference and not on the precise dimensions of either structure. Here we realize the photonic analogue of a Jackiw-Rebbi (JR) state in hexagonal boron nitride (hBN) hosting negatively charged boron vacancies, optically addressable spin defects. Two partially etched gratings, in which the order of the radiating and dark band-edge modes is reversed, are joined side by side. Angle-resolved reflectivity and photoluminescence reveal this reversal and a non-dispersive JR state at the junction. The state proves remarkably tolerant: despite fabrication errors of up to 20 nm, its wavelength lies within a 1 nm of the design, as predicted by a systematic numerical tolerance analysis. JR gratings therefore offer a robust, monolithic platform for controlling the emission of luminescent defects.

physics.optics↗

arXiv2026

Mid-infrared reconfiguration of population flow in lanthanide nanocrystals

Converting mid-infrared (MIR) radiation to visible or near-infrared wavelengths is essential for imaging and sensing, yet achieving sensitive, low-power, and scalable detection remains challenging. Lanthanide nanocrystals provide an alternative through ratiometric luminescence but are typically constrained by Boltzmann statistics, which tie population distributions to lattice temperature and limit signal contrast. Here we show that MIR irradiation rebalances dissipative relaxation pathways, driving lanthanide emitters into a non-Boltzmann steady state that enables non-thermal control of population distributions. This allows emission behaviors inaccessible under thermal equilibrium. We exploit this regime to achieve linear MIR detection with respect to MIR power across 6.8 to 8.6 micrometers. The ratiometric response is intrinsically independent of the pump power, enabling operation at an ultralow excitation power of 10 uW, several orders of magnitude lower than conventional approaches. Using standard silicon photodetectors, we then demonstrate room-temperature MIR imaging with detection limits approaching 4 nW um-2. Our results establish lanthanide nanoparticles as an efficient platform for MIR conversion and sensing in nanophotonic systems.

physics.optics↗

arXiv2026

Engineering of Dual Wavelength, Polarization Selective Metalenses in Silicon Carbide

Spin defects in silicon carbide (SiC) are promising candidates for integrated quantum photonics, offering long-lived spin states and near-infrared emission suitable for low-loss photonic integration and fibre-based quantum communication. However, light extraction from these defects remains challenging due the relatively high refractive index of SiC. Metalenses offer a compact approach to enhance light collection by engineering the wavefront directly at the material interface. Here, we design and fabricate monolithic metalenses from SiC bulk material that simultaneously operate at 860 and 1240 nm, matching with emission from the nitrogen vacancy and silicon vacancy colour centers. By independently engineering the phase response at both wavelengths, the metalens enables collection and polarization manipulation of the emitted light. We further employ the metalenses to demonstrate optically detected magnetic resonance of both defects simultaneously. These multifunctional metalenses provide a compact optical interface for scalable integrated SiC photonic devices.

quant-ph↗

arXiv2026

Engineering and Tuning of high quality hexagonal boron nitride nanophotonic resonators

Van der Waals materials are offering intriguing opportunities as building blocks for advanced quantum information technologies and integrated quantum photonic systems. Critical to their development, is robust and high quality light-matter interactions which can be delivered through the fabrication of optical resonators. Here we demonstrate a robust fabrication of one dimensional photonic crystal cavities (1D PCC) and microdisk resonators from hexagonal boron nitride, exhibiting Quality factors of ~ 4300 and ~ 8300, respectively. With these two classes of devices we demonstrated cavity mode tuning via atomic layer deposition and gas condensation. Cavity resonances were shifted by and ~9 nm for the 1D PCCs and ~16 nm in the microdisk resonators, respectively. Our work opening a promising pathway for a realisation emitter cavity coupling in hBN and eventually to a fully integrated quantum photonic circuitry with hBN.

physics.optics↗

arXiv2026

Deterministic integration of quantum emitters and optical cavities in a van der Waals crystal

Single-photon emitters in hexagonal boron nitride (hBN) combine bright optical emission with optically addressable spin states, offering a promising platform for integrated quantum photonics. However, their stochastic creation and spectral variability have prevented deterministic integration with photonic cavities. Here we demonstrate a fabrication protocol that enables precise, deterministic coupling of pre-selected visible emitters to circular Bragg grating (CBG) cavities in hBN. By patterning etched alignment markers and performing prefabrication confocal mapping, we locate emitters with sub-micron accuracy and design cavity geometries matched to their zero-phonon line wavelengths. The resulting devices show enhanced emission and reliable spectral alignment between emitter and cavity mode. This work establishes a deterministic cavity-emitter integration scheme in a van der Waals material and provides a scalable route towards on-chip quantum photonic and spin-based platforms using hBN.

physics.optics↗

arXiv2025

An Inverse Design Wavelength Demultiplexer for On-Chip Photoluminescence Sorting in TMDC Heterostructures

Emerging two-dimensional transition metal dichalcogenides (TMDCs) offer a promising platform for on-chip integrated photonics because of their unique optical and electronic properties. Their naturally passivated surfaces make them highly tolerant to lattice mismatch, enabling seamless heterogeneous integration by stacking different van der Waals materials, a crucial step in the development of advanced photonic devices. Here, we demonstrate the use of an inverse design wavelength demultiplexing waveguides for on-chip sorting and routing of distinct photoluminescence from the heterojunction formed by WS2 and WSe2 monolayers. The integrated nanophotonic chip splits and sorts excitonic emission into individual waveguides at room temperature. Our demonstration opens up new perspectives for integrating light sources in van der Waals materials with functional integrated photonics, offering a versatile platform for both fundamental research and practical applications.

physics.optics↗

arXiv2024

Double Etch Method for the Fabrication of Nanophotonic Devices from Van der Waals Materials

The integration of van der Waals (vdW) materials into photonic devices has laid out a foundation for many new quantum and optoelectronic applications. Despite tremendous progress in the nanofabrication of photonic building blocks from vdW crystals, there are still limitations, specifically with large-area devices and masking. Here, we focus on hexagonal boron nitride (hBN) as a vdW material and present a double etch method that overcomes problems associated with methods that employ metallic films and resist-based films for masking. Efficacy of the developed protocol is demonstrated by designing and fabricating a set of functional photonic components including waveguides, ring resonators and photonic crystal cavities. The functionality of the fabricated structures is demonstrated through optical characterization over several key spectral ranges. These include the near-infrared and blue ranges, where the hBN boron vacancy (VB-) spin defects and the coherent B center quantum emitters emit, respectively. The double etch method enables fabrication of high-quality factor optical cavities and constitutes a promising pathway toward on-chip integration of vdW materials.

physics.optics↗

arXiv2022

Monolithic Silicon Carbide Metalenses

Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the advancement of scalable on-chip networks. In this work, we numerically design, fabricate and demonstrate the performance of monolithic metalenses from SiC suitable for on-chip optical operations. We engineer two distinct lenses, with parabolic and cubic phase profiles, operating in the near infrared spectral range, which is of interest for quantum and photonic applications. We support the lens fabrication by optical transmission measurement and characterize the focal points of the lenses. Our results will accelerate the development of SiC nanophotonic devices and aid in an on chip integration of quantum emitters with meta-optical components.

physics.optics↗

arXiv2021

Fabrication of photonic resonators in bulk 4H-SiC

The design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work we apply a Faraday cage based oblique angle etch method to fabricate various functional photonic devices from 4H Silicon Carbide - a material that has attracted attention in recent years, due to its potential in optomechanics, nonlinear optics and quantum information. We detail the processing conditions and thoroughly address the geometrical and optical characteristics of the fabricated devices. Employing photoluminescence measurements we demonstrate high quality factors for suspended microring resonators of up to 3500 in the visible range. Such devices will be applicable in the future to augment the properties of SiC in integrated on chip quantum photonics.

physics.optics↗

arXiv2021

Nanofabrication of high Q, transferable, diamond resonators

Advancement of diamond based photonic circuitry requires robust fabrication protocols of key components, including diamond resonators and cavities. Here, we present 1D (nanobeam) photonic crystal cavities generated from single crystal diamond membranes utilising a metallic tungsten layer as a restraining, conductive and removable hard mask. The use of tungsten instead of a more conventional silicon oxide layer enables good repeatability and reliability of the fabrication procedures. The process yields high quality diamond cavities with quality factors (Q factors) approaching 10$^$4. Finally, we show that the cavities can be picked up and transferred onto a trenched substrate to realise fully suspended diamond cavities. Our fabrication process demonstrates the capability of diamond membranes as modular components for broader diamond based quantum photonic circuitry.

physics.optics↗