arXiv · 2608.27213
Occupation-Driven Josephson Diode in a Symmetric Junction
Abstract
We propose a Josephson diode mechanism in which nonreciprocity arises not from a conventional asymmetric Andreev spectrum but from nonequilibrium occupation of the current-carrying states engineered by attached reservoirs. We realize this mechanism in a double-quantum-dot junction, where a phase-textured nonlocal reservoir acts as a quantum Zeno selector: rapid dissipation freezes out the bright state directly coupled to the jump operator $L$, while preserving an orthogonal dark Andreev channel whose supercurrent remains comparable to that of the lossless junction. In the infinite-gap limit, the steady-state current factorizes as $I_{\rm ss}=I_A P_\gamma$, so that even when the Andreev current $I_A$ is strictly reciprocal, the phase asymmetry of $P_\gamma$ alone can produce a Josephson diode effect through reservoir engineering. We further show that local Coulomb repulsion can drive the system toward a nearly ideal diode regime via a dark-pair resonance. Using Keldysh-Lindblad calculations, we demonstrate that our results remain robust for realistic junctions with a finite superconducting gap and dissipation.
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Jianxiong Zhai, Zelei Zhang, Jiawei Yan. 2026-08-27. Occupation-Driven Josephson Diode in a Symmetric Junction. https://arxiv.org/abs/2608.27213
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