Encapsulated macroscopic WS$_2$ monolayers enable room-temperature exciton-polariton lattices

Shiyu Huang; Sander Scheel; Jiang Qu; Johannes Düreth; Dominik Horneber; Edith Wietek; Simon Widmann; Libo Ma; Monika Emmerling; Martin Kamp; Simon Betzold; Alexey Chernikov; Sven Höfling; Sebastian Klembt

arXiv · 2609.07587

Encapsulated macroscopic WS$_2$ monolayers enable room-temperature exciton-polariton lattices

Shiyu Huang·Sander Scheel·Jiang Qu·Johannes Düreth·Dominik Horneber·Edith Wietek·Simon Widmann·Libo Ma·Monika Emmerling·Martin Kamp·Simon Betzold·Alexey Chernikov·Sven Höfling·Sebastian Klembt

View original source ↗Read source document ↗Export metadata ↓

Abstract

Large-area, optically homogeneous monolayer semiconductors are a critical prerequisite for scalable room-temperature polaritonics and for realizing polariton lattices extending across many unit cells. Yet, the small size, optical inhomogeneity, and device-to-device variability of conventional exfoliated flakes have remained major obstacles. Here, we overcome these limitations using 1-dodecanol-encapsulated WS$_2$ monolayers that combine millimeter-scale coverage with remarkably uniform optical properties over lateral distances approaching $300\,$$\mu \mathrm{m}$. Integrated into a tunable open microcavity, these monolayers exhibit robust room-temperature exciton-photon strong coupling, evidenced by a pronounced anti-crossing and a Rabi splitting of $\hbar \Omega_{\mathrm{R}} \approx 31\,\mathrm{meV}$. Leveraging the exceptional uniformity of this platform, we realize a two-dimensional polaritonic kagome lattice and directly resolve its characteristic band structure. Angle-resolved spectroscopy reveals Dirac dispersive bands together with a weakly dispersive flat-band-like branch within the $s$-band, in good agreement with a linear non-interacting model. Complementary momentum- and real-space imaging further identifies the associated bond-centered and site-centered mode profiles. These results establish large-area WS$_2$ monolayers in open microcavities as a scalable platform for engineering polariton band structures and exploring synthetic quantum materials under ambient conditions.

Explore related subjects

cond-mat.mes-hall

Keep this discovery

BibTeX RIS

Shiyu Huang, Sander Scheel, Jiang Qu, Johannes Düreth, Dominik Horneber, Edith Wietek, Simon Widmann, Libo Ma, Monika Emmerling, Martin Kamp, Simon Betzold, Alexey Chernikov, Sven Höfling, Sebastian Klembt. 2026-09-07. Encapsulated macroscopic WS$_2$ monolayers enable room-temperature exciton-polariton lattices. https://arxiv.org/abs/2609.07587

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall↗

arXiv2026

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall↗

arXiv2026

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall↗