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arXiv · 2609.11963

12 nm FinFETs from 292 K to 10 mK: Characterization and a Temperature-Continuous Compact Model for Qubit Control

DaKyung Lee·Liyang Jin·Jungmin Lee·Rohit Rangaraj·Linbo Shao·Jeffrey S. Walling
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Abstract

We report cryogenic characterization and compact modeling of GlobalFoundries (GF) 12LP regular-voltage-threshold (RVT) n- and p-FinFETs, measured from 292 K to 10 mK. Both devices retain sub-Kelvin gate control without carrier freeze-out, with the n-type device exhibiting an intrinsic sub-threshold slope (SS) floor of 24.8 mV/dec. To bypass high on-chip series routing resistance that confounds peak-gm extraction, we adopt a fixed-current (3.26 uA/um) methodology. These low-current metrics inform a continuous 1.36 K to 292 K compact model using dynamic parameter injection, preserving room-temperature process development kit (PDK) qualification.

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DaKyung Lee, Liyang Jin, Jungmin Lee, Rohit Rangaraj, Linbo Shao, Jeffrey S. Walling. 2026-08-19. 12 nm FinFETs from 292 K to 10 mK: Characterization and a Temperature-Continuous Compact Model for Qubit Control. https://arxiv.org/abs/2609.11963

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