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arXiv · 2609.35702

A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band

Timothy Draher·Nolan Bitner·Vasileios Niaouris·Claire E. McDermott·David Czaplewski·Supratik Guha·David D. Awschalom·F. Joseph Heremans·Alan M. Dibos
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Abstract

Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising candidates for quantum network nodes. However, efficient photon extraction from the high-refractive-index SiC host remains challenging. Here, we introduce a silicon-on-SiC heterogeneous photonic platform in which silicon nanocavities evanescently couple to shallow vanadium dopants in commercial 4H-SiC, enabling efficient zero-phonon line (ZPL) collection under resonant excitation. In as-grown ensembles, we observe Purcell-enhanced photoluminescence with transient spectral hole burning linewidths of 50 MHz on microsecond timescales. In dilute implanted samples, we isolate individual vanadium centers with high-purity single photon emission and a Purcell-enhanced lifetime of 109 ns. The entire optical interface operates through a single lensed fiber, including a 905 nm repump laser that recovers the vanadium charge state with 95% efficiency. These results establish Si-on-SiC as a scalable, foundry-compatible platform for telecom-wavelength spin-photon interfaces.

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Timothy Draher, Nolan Bitner, Vasileios Niaouris, Claire E. McDermott, David Czaplewski, Supratik Guha, David D. Awschalom, F. Joseph Heremans, Alan M. Dibos. 2026-09-28. A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band. https://arxiv.org/abs/2609.35702

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