Bifurcation of laser-dressed band extrema in solids under intense low-frequency fields

Abstract

We show that an intense low-frequency laser field can qualitatively modify the local extremal structure of an interband energy gap in a crystal. Using an instantaneous laser-dressed basis obtained from the nonperturbative diagonalization of the multiband crystal Hamiltonian, we derive a quartic normal form for the dressed gap near a high-symmetry point. At a critical field, the quadratic part of this normal form changes sign, and the gap experiences a bifurcation: a single symmetric minimum splits into two symmetry-related minima separated by a local maximum. We identify the microscopic origin of this bifurcation by decomposing the quadratic part into a homogeneous Stark contribution and a field-modified band-curvature contribution. The latter originates from the multiband redistribution of interband polarizations and provides the mechanism for the field-induced change of the gap extrema. A realization for the Kronig--Penney model demonstrates the same bifurcation at multiple high-symmetry points and for different interband gaps. As an illustration of its spectral consequences, we show that the bifurcation gives rise to an additional van Hove feature in the instantaneous interband susceptibility above the absorption edge. Our results establish a general mechanism by which strong-field dressing modifies the local geometry of the electronic spectrum.