Modeling the CNOT gate in Germanium double quantum dots

Abstract

We model a controlled-NOT (CNOT) gate mediated by exchange interactions in a realistic Ge/GeSi hole spin-qubit device. We use for that purpose a computationally efficient framework based on a compact dressed basis of many-body singlet and triplet states, which enables fast time-dependent simulations that would be prohibitive within a conventional configuration-interaction approach. We discuss the dominant sources of infidelity in ideal (noise-free) devices. On the one hand, the nonadiabaticity of the tunnel barrier ramps, enhanced by the transverse component of the exchange interaction, imposes limits on the speed of the CNOT gate. On the other hand, the AC Stark shift of the conditional resonance and the off-resonant driving of the complementary transition can significantly degrade the gate fidelity and call for a careful optimization of the driving conditions. Finally, we investigate the impact of quasi-static charge noise on the fidelity of the CNOT gate. We find that the capture of charges near the qubits can strongly disrupt the conditional operation, while the nanometer-scale motion of charges results in a loss of fidelity that sensitively depends on the position and strength of the corresponding dipole. Our results quantify the requirements on barrier control, microwave driving, and charge-noise stability for high-fidelity two-qubit operations in Ge/GeSi hole-spin qubits.