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arXiv · 2611.00147

Optical Signature of Bias-Induced Carrier Injection in a WSe2/MoS2 Heterostructure Diode

Yasuyuki Hirata·Hibiki Kinpara·Shinya Ohno·Yoshihiro Miyauchi
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Abstract

We investigate the bias-dependent photoluminescence (PL) response of a WSe$_2$/MoS$_2$ heterostructure diode. Under forward bias, trion-related emission in WSe$_2$ is markedly enhanced, whereas reverse bias produces minimal spectral changes. This asymmetric response cannot be explained by electric-field effects alone and instead reflects carrier injection at the functional interface. These results demonstrate that PL provides a direct optical probe of carrier injection in an operating van der Waals heterostructure. More broadly, this approach establishes spatially resolved PL spectroscopy as a versatile tool for pinpointing the interfaces governing device operation in van der Waals heterostructures.

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Yasuyuki Hirata, Hibiki Kinpara, Shinya Ohno, Yoshihiro Miyauchi. 2026-10-30. Optical Signature of Bias-Induced Carrier Injection in a WSe2/MoS2 Heterostructure Diode. https://doi.org/10.1063/5.0347746

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