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Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots

A. J. Williamson·L. W. Wang·Alex Zunger
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Abstract

We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the ``linear combination of bulk bands'' method. We present a detailed comparison with experiment, including quantites such as the single particle electron and hole energy level spacings, the excitonic band gap, the electron-electron, hole-hole and electron hole Coulomb energies and the optical polarization anisotropy. We find a generally good agreement, which is improved even further for a dot composition where some Ga has diffused into the dots.

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A. J. Williamson, L. W. Wang, Alex Zunger. 2000-03-03. Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots. https://doi.org/10.1103/physrevb.62.12963

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