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L. W. Wang

Publications and source records attributed to L. W. Wang.

4 recordsLinked to original sources
arXiv2010

Melting of superheated crystals initiates on vacancies

In a large variety of ideal crystals we found that when rapidly migrating atoms squash or annihilate a neighbouring vacancy and produce a disordered cluster, the heat of migration stored in the system exceeds the enthalpy increase required for the coordinating atoms of the vacancy to form a liquid phase, i.e. the liquid phase nucleates from vacancies. Furthermore volumetric analysis supports this well. This vacancy-decomposition model provides quantitative information on the melting point, the latent heat and the volume change upon melting and hence clarifies the mechanism of melting.

cond-mat.mtrl-sci↗
arXiv2000

Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots

We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the ``linear combination of bulk bands'' method. We present a detailed comparison with experiment, including quantites such as the single particle electron and hole energy level spacings, the excitonic band gap, the electron-electron, hole-hole and electron hole Coulomb energies and the optical polarization anisotropy. We find a generally good agreement, which is improved even further for a dot composition where some Ga has diffused into the dots.

cond-mat.mtrl-sci↗
arXiv1997

Comparison of two methods for describing the strain profiles in quantum dots

The electronic structure of interfaces between lattice-mismatched semiconductor is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain -- continuum elasticity (CE, treated as a finite difference problem) and atomistic elasticity (AE). While for small strain the two methods must agree, for the large strains that exist between lattice-mismatched III-V semiconductors (e.g. 7% for InAs/GaAs outside the linearity regime of CE) there are discrepancies. We compare the strain profile obtained by both approaches (including the approximation of the correct C_2 symmetry by the C_4 symmetry in the CE method), when applied to C_2-symmetric InAs pyramidal dots capped by GaAs.

cond-mat.mtrl-sci↗