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Alternative Buffer-Layers for the Growth of SrBi2Ta2O9 on Silicon

J. Schumacher·J. C. Martinez·F. Martin·M. Maier·H. Adrian·R. Raiteri·H. J. Butt
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Abstract

In this work we investigate the influence of the use of YSZ and CeO2/YSZ as insulators for Metal- Ferroelectric-Insulator-Semiconductor (MFIS) structures made with SrBi2Ta2O9 (SBT). We show that by using YSZ only the a-axis oriented Pyrochlore phase could be obtained. On the other hand the use of a CeO2/YSZ double-buffer layer gave a c-axis oriented SBT with no amorphous SiO2 inter- diffusion layer. The characteristics of MFIS diodes were greatly improved by the use of the double buffer. Using the same deposition conditions the memory window could be increased from 0.3 V to 0.9 V. From the piezoelectric response, nano-meter scale ferroelectric domains could be clearly identified in SBT thin films.

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J. Schumacher, J. C. Martinez, F. Martin, M. Maier, H. Adrian, R. Raiteri, H. J. Butt. 2000-03-22. Alternative Buffer-Layers for the Growth of SrBi2Ta2O9 on Silicon. https://arxiv.org/abs/cond-mat/0003356

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